Nanoscale temperature sensing of electronic devices with calibrated scanning thermal microscopy

Swoboda, Timm; Wainstein, Nicolás; Köroğlu, Çağıl; Gao, Xingguo; Lanza, Mario; Hilgenkamp, H.; Pop, Eric; Yalon, Eilam; Rojo, Miguel Muñoz

doi:10.1039/d3nr00343d

Cited by 5 publications

(8 citation statements)

References 34 publications

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“…To probe the amount and variation of the thermal background noise, a scan with zero bias current was always performed prior to the first biased SThM scan and after the last. To be noted, the thermal signal measured from SThM could not be directly related to the surface temperature without certain calibration steps, [ 28 ] but served as a qualitative indication of the currents flowing in the bridges.…”

Section: Methodsmentioning

confidence: 99%

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Multibridge VO₂‐Based Resistive Switching Devices in a Two‐Terminal Configuration

Gao,

Roskamp,

Swoboda

et al. 2023

Adv Elect Materials

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Vanadium dioxide exhibits a hysteretic insulator‐to‐metal transition (IMT) near room temperature, forming the foundation for various forms of resistive switching devices. Usually, these are realized in the form of two‐terminal bridge‐like structures. The authors show here that by incorporating multiple, parallel VO2 bridges in a single two‐terminal device, a wider range of possible characteristics can be obtained, including a manifold of addressable resistance states. Different device configurations are studied, in which the number of bridges, the bridge dimensions, and the interbridge distances are varied. The switching characteristics of the multibridge devices are influenced by the thermal cross‐talk between the bridges. Scanning thermal microscopy (SThM) is used to image the current distributions at various voltage/current bias conditions. This work presents a route to realize devices exhibiting highly nonlinear, multistate current–voltage characteristics, with potential applications in, e.g., tunable electronic components and novel, neuromorphic information processing circuitry.

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Section: Methodsmentioning

confidence: 99%

“…[25] SThM uses a special thermo-resistive probe with high thermal sensitivity that enables the characterization of thermal phenomena on the sample surface with nanoscale spatial resolution. [26][27][28] For our VO 2 bridges, the local heating generated is directly linked to the current flow, due to Joule heating. [17,29]…”

Section: Introductionmentioning

confidence: 99%

Multibridge VO₂‐Based Resistive Switching Devices in a Two‐Terminal Configuration

Gao,

Roskamp,

Swoboda

et al. 2023

Adv Elect Materials

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“…We operated the SThM in sensing mode using a probe power of 19 μW, which, as determined in a prior study, is optimum for measuring under sensing conditions. 35 In that mode, we kept the probe at a low self-heating temperature while achieving a high temperature sensitivity. For the conversion of the SThM Wheatstone bridge voltage signal (mV) into temperature, we calibrated the system as described in ref 35.…”

Section: Device Thermal Characterization (Scanning Thermal Microscopy)mentioning

confidence: 99%

“…35 In that mode, we kept the probe at a low self-heating temperature while achieving a high temperature sensitivity. For the conversion of the SThM Wheatstone bridge voltage signal (mV) into temperature, we calibrated the system as described in ref 35.…”

Section: Device Thermal Characterization (Scanning Thermal Microscopy)mentioning

confidence: 99%

“…The electrical resistance of these probes varies with temperature, and it is connected electrically to a Wheatstone bridge to sense these variations during surface scans. We operated the SThM in sensing mode using a probe power of 19 μW, which, as determined in a prior study, is optimum for measuring under sensing conditions …”

Section: Device Thermal Characterization (Scanning Thermal Microscopy)mentioning

confidence: 99%

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Thermal Compact Modeling and Resistive Switching Analysis in Titanium Oxide-Based Memristors

Roldán,

Cantudo,

Maldonado

et al. 2024

ACS Appl. Electron. Mater.

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Resistive switching devices based on the Au/Ti/TiO 2 /Au stack were developed. In addition to standard electrical characterization by means of I−V curves, scanning thermal microscopy was employed to localize the hot spots on the top device surface (linked to conductive nanofilaments, CNFs) and perform in-operando tracking of temperature in such spots. In this way, electrical and thermal responses can be simultaneously recorded and related to each other. In a complementary way, a model for device simulation (based on COMSOL Multiphysics) was implemented in order to link the measured temperature to simulated device temperature maps. The data obtained were employed to calculate the thermal resistance to be used in compact models, such as the Stanford model, for circuit simulation.The thermal resistance extraction technique presented in this work is based on electrical and thermal measurements instead of being indirectly supported by a single fitting of the electrical response (using just I−V curves), as usual. Besides, the set and reset voltages were calculated from the complete I−V curve resistive switching series through different automatic numerical methods to assess the device variability. The series resistance was also obtained from experimental measurements, whose value is also incorporated into a compact model enhanced version.

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Spatially-Resolved Thermometry of Filamentary Nanoscale Hot Spots in TiO₂ Resistive Random Access Memories to Address Device Variability

Swoboda,

Gao,

Rosário

et al. 2023

ACS Appl. Electron. Mater.

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Resistive random access memories (RRAM), based on the formation and rupture of conductive nanoscale filaments, have attracted increased attention for application in neuromorphic and in-memory computing. However, this technology is, in part, limited by its variability, which originates from the stochastic formation and extreme heating of its nanoscale filaments. In this study, we used scanning thermal microscopy (SThM) to assess the effect of filament-induced heat spreading on the surface of metal oxide RRAMs with different device designs. We evaluate the variability of TiO 2 RRAM devices with area sizes of 2 × 2 and 5 × 5 μm 2 . Electrical characterization shows that the variability indicated by the standard deviation of the forming voltage is ∼2 times larger for 5 × 5 μm 2 devices than for the 2 × 2 μm 2 ones. Further knowledge on the reason for this variability is gained through the SThM thermal maps. These maps show that for 2 × 2 μm 2 devices the formation of one filament, i.e., hot spot at the device surface, happens reliably at the same location, while the filament location varies for the 5 × 5 μm 2 devices. The thermal information, combined with the electrical, interfacial, and geometric characteristics of the device, provides additional insights into the operation and variability of RRAMs. This work suggests thermal engineering and characterization routes to optimize the efficiency and reliability of these devices.

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Nanoscale temperature sensing of electronic devices with calibrated scanning thermal microscopy

Abstract: Heat dissipation threatens the performance and lifetime of many electronic devices. As the size of the devices shrink to the nanoscale, we require spatially and thermally resolved thermometry to observe...

Cited by 5 publications

References 34 publications

Multibridge VO₂‐Based Resistive Switching Devices in a Two‐Terminal Configuration

Multibridge VO₂‐Based Resistive Switching Devices in a Two‐Terminal Configuration

Thermal Compact Modeling and Resistive Switching Analysis in Titanium Oxide-Based Memristors

Spatially-Resolved Thermometry of Filamentary Nanoscale Hot Spots in TiO₂ Resistive Random Access Memories to Address Device Variability

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Nanoscale temperature sensing of electronic devices with calibrated scanning thermal microscopy

Abstract: Heat dissipation threatens the performance and lifetime of many electronic devices. As the size of the devices shrink to the nanoscale, we require spatially and thermally resolved thermometry to observe...

Cited by 5 publications

References 34 publications

Multibridge VO2‐Based Resistive Switching Devices in a Two‐Terminal Configuration

Multibridge VO2‐Based Resistive Switching Devices in a Two‐Terminal Configuration

Thermal Compact Modeling and Resistive Switching Analysis in Titanium Oxide-Based Memristors

Spatially-Resolved Thermometry of Filamentary Nanoscale Hot Spots in TiO2 Resistive Random Access Memories to Address Device Variability

Contact Info

Product

Resources

About

Multibridge VO₂‐Based Resistive Switching Devices in a Two‐Terminal Configuration

Multibridge VO₂‐Based Resistive Switching Devices in a Two‐Terminal Configuration

Spatially-Resolved Thermometry of Filamentary Nanoscale Hot Spots in TiO₂ Resistive Random Access Memories to Address Device Variability