Nanoscale Structure, Composition, and Charge Transport Analysis of Transparent Conducting Oxide Nanowires Written by Focused Ion Beam Implantation

Sosa, Norma; Chen, Christopher; Li, Jun; Xie, Shuyan; Marks, Tobin J.; Hersam, Mark C.

doi:10.1021/ja9092242

Cited by 11 publications

(30 citation statements)

References 87 publications

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“…PIIID overcomes the limitations of regular ion beam implantation and is suitable for processing samples with complex shapes ( 20 ). Following PIIID processing, the anti-corrosion, anti-abrasion and anti-fatigue properties of materials are significantly improved and therefore, it has gained attention worldwide and is now used in several biomedical applications ( 11 – 13 ).…”

Section: Discussionmentioning

confidence: 99%

Zinc ion implantation-deposition technique improves the osteoblast biocompatibility of titanium surfaces

Liang

Chen

et al. 2015

Molecular Medicine Reports

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The plasma immersion ion implantation and deposition (PIIID) technique was used to implant zinc (Zn) ions into smooth surfaces of pure titanium (Ti) disks for investigation of tooth implant surface modification. The aim of the present study was to evaluate the surface structure and chemical composition of a modified Ti surface following Zn ion implantation and deposition and to examine the effect of such modification on osteoblast biocompatibility. Using the PIIID technique, Zn ions were deposited onto the smooth surface of pure Ti disks. The physical structure and chemical composition of the modified surface layers were characterized by scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS), respectively. In vitro culture assays using the MG-63 bone cell line were performed to determine the effects of Zn-modified Ti surfaces following PIIID on cellular function. Acridine orange staining was used to detect cell attachment to the surfaces and cell cycle analysis was performed using flow cytometry. SEM revealed a rough ‘honeycomb’ structure on the Zn-modified Ti surfaces following PIIID processing and XPS data indicated that Zn and oxygen concentrations in the modified Ti surfaces increased with PIIID processing time. SEM also revealed significantly greater MG-63 cell growth on Zn-modified Ti surfaces than on pure Ti surfaces (P<0.05). Flow cytometric analysis revealed increasing percentages of MG-63 cells in S phase with increasing Zn implantation and deposition, suggesting that MG-63 apoptosis was inhibited and MG-63 proliferation was promoted on Zn-PIIID-Ti surfaces. The present results suggest that modification with Zn-PIIID may be used to improve the osteoblast biocompatibility of Ti implant surfaces.

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Section: Discussionmentioning

confidence: 99%

Zinc ion implantation-deposition technique improves the osteoblast biocompatibility of titanium surfaces

Liang

Chen

et al. 2015

Molecular Medicine Reports

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“…We here present an effective method for the non-subtractive nanopatterning of electrically conductive wires and other features embedded in a dielectric Al 2 O 3 substrate, using focused ion beam (FIB). While patterning of nanowires in transparent conductive In 2 O 3 has been demonstrated using FIB, the conductivity modulation was limited to 4 orders of magnitude 28,29 . Here, we show nanopatterning of conductive zones in highly insulating Al 2 O 3 , achieving a conductivity modulation of 14 orders of magnitude (see Supporting Information) 30 .…”

Section: Correspondence: Hmohseni@northwesternedumentioning

confidence: 99%

“…The following supporting information is available from the author: Table S1: Calculations of magnitude conductivity modulation in Al2O3 reported in this paper compared to that previously reported for In2O3 28,29,38 . Figure S1: Additional proof for uniformity of the implanted conductive regions Figure S2: Additional graphic visualization of current-voltage characteristics after RTA treatments Table S2: Complete set of current-voltage measurements performed on all the fabricated devices…”

Section: Supporting Informationmentioning

confidence: 99%

Giant Conductivity Modulation of Aluminum Oxide Using Focused Ion Beam

Bianconi¹,

Park²,

Mohseni

2019

ACS Appl. Electron. Mater.

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Precise control of the conductivity of semiconductors through doping has enabled the creation of advanced electronic devices, similarly, the ability to control the conductivity in oxides can enable novel advanced electronic and optoelectronic functionalities. While this was successfully shown for moderately insulating oxides, such as In 2 O 3 , a reliable method for increasing the conductivity of highly insulating, wide bandgap dielectrics, such as aluminum oxide (Al 2 O 3 ), has not been reported yet. Al 2 O 3 is a material of significant technological interest, permeating diverse fields of application, thanks to its exceptional mechanical strength and dielectric properties. Here we present a versatile method for precisely changing the conductivity of Al 2 O 3 . Our approach greatly exceeds the magnitude of the best previously reported change of conductivity in an oxide (In 2 O 3 ). With an increase in conductivity of about 14 orders of magnitude, our method presents about 10 orders of magnitude higher change in conductivity than the best previously reported result. Our method can use focused ion beam to produce conductive zones with nanoscale resolution within the insulating Al 2 O 3 matrix. We investigated the source of conductivity modulation and identified trap-assisted conduction in the ion damage-induced defects as the main charge transport mechanism. Temperature-dependency of the conductivity and optical characterization of the patterned areas offer further insight into the nature of the conduction mechanism. We also show that the process is extremely reproducible and robust against moderate annealing temperatures and chemical environment. The record conductivity modulation, combined with the nanoscale patterning precision allows the creation of conductive zones within a highly insulating, mechanically hard, chemically inert, and bio-compatible matrix, which could find broad applications in electronics, optoelectronics, and medical implants.Aluminum oxide (Al 2 O 3 ) is one of the most widely employed dielectric materials, thanks to its excellent insulating properties 1 , mechanical hardness and resistance 2 , and biocompatibility 2,3 , with applications ranging from device passivation 1,4-8 , MOSFET gate 9-13 , to biomedical implants and antifouling passivation 2,3,14,15 . Electrical functionalization of Al 2 O 3 via reliable and spatially-accurate control of its conductivity could enable novel sensing technologies encompassing electrical contacts embedded in a mechanically hard, chemically inert, and electrically insulating dielectric matrix. Examples of such technological applications include photon emission and detection 7,16-19 , low-energy in-terconnects 20-22 , energy conversion 1,23,24 , and implantable devices [25][26][27] . We here present an effective method for the non-subtractive nanopatterning of electrically conductive wires and other features embedded in a dielectric Al 2 O 3 substrate, using focused ion beam (FIB). While patterning of nanowires in transparent conductive In 2 O 3 has been ...

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“…structures, e.g., Pt or W, for surface functionalization [10] or analytical purposes [1] ). 4) Surface functionalization: The implantation of ions from the source can be used to produce structures on the material surface for functionalization purposes (e.g., implantation of Ga þ to create electrically conductive areas [11] ).…”

mentioning

confidence: 99%

Focused Ion Beam Parameters for the Preparation of Oxidic Ceramic Materials

et al. 2020

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The focused ion beam (FIB) technology is a useful tool for structuring and preparing material surfaces on a micrometer and nanometer scale. [1,2] The technology is based on the principle that ions are extracted from an ion source (e.g., a liquid metal ion source, most commonly Ga þ , or gas field ion sources, such as He þ ) by an electric field. [1] Then, they are accelerated toward the substrate surface and focused to form an ion beam by applied electric and magnetic fields. For Ga þ sources, typical acceleration voltages are 5-50 keV and a beam focus <10 nm can be realized. The ion current is usually in the range of tenths of picoamperes to several nanoamperes. [2,3] When the focused ion beam meets the surface of the target material, various interactions between the incident ion beam and target surface occur. [1] First, the incident ions of the beam enter the sample. Due to interactions with the target atoms (nuclei and electrons), the ions are deflected. Second, collisions with target atoms are likely to take place. This may cause a removal of a target atom from its lattice position. Then, the removed target atom can collide with further target atoms, creating collision cascades. Numerous cascades will reach the sample surface, and if provided sufficient energy, will remove atoms from the sample surface. This effect is called sputtering. These processes of ions penetrating and leaving the sample surface are accompanied by the ejection of secondary electrons from the sample surface. Numerous ions that penetrate the surface remain as implanted ions in the target material.These interactions between the FIB and the material surfaces can be brought to several uses for the industrial operator or scientists. 1) Imaging: The ejected secondary electrons and ions from the surface can be used for imaging purposes. [1] 2) Sputtering: This removal of material from the target surface, also called milling, can be used to produce defined samples for further analytical applications (e.g., production of lamellar samples for transmission electron microscopy (TEM) [4,5] ), to structure material surfaces down to the nanometer scale (e.g., structuring of semiconductors [3,6] or samples for mechanical testing on a micrometer scale [7,8] ), and to create serial sections by repeated milling steps for 3D analyses of bulk material. [9] Furthermore, the removed material can be used for elemental analysis of the material surface with the help of secondary ion mass spectrometry (SIMS). [2] 3) Creation of structures: The energy provided by the incident ions can be used to deposit other elements that are provided by precursor molecules. They are introduced via a gas injection system (GIS) on the substrate surface. Due to the energetic input of the ion beam, cracking reactions take place in the precursors and the intended component of the precursor molecules is deposited on the material (e.g., deposition of electrically conductive metallic

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Nanoscale Structure, Composition, and Charge Transport Analysis of Transparent Conducting Oxide Nanowires Written by Focused Ion Beam Implantation

Cited by 11 publications

References 87 publications

Zinc ion implantation-deposition technique improves the osteoblast biocompatibility of titanium surfaces

Zinc ion implantation-deposition technique improves the osteoblast biocompatibility of titanium surfaces

Giant Conductivity Modulation of Aluminum Oxide Using Focused Ion Beam

Focused Ion Beam Parameters for the Preparation of Oxidic Ceramic Materials

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