Nanoscale polarisation switching and leakage currents in (Ba_0.955Ca_0.045)(Zr_0.17Ti_0.83)O₃epitaxial thin films

Ferroelectric switching dynamics in 0.5Ba(Zr0.2Ti0.8)O3-0.5(Ba0.7Ca0.3)TiO3 thin films

“…22,23 Moreover, the coercive field of 60 kV cm À1 is much higher than the value of 1.75 kV cm À1 for the bulk BCZT ceramic, which is a consequence of much smaller grains in comparison with the bulk ceramic. 20 However, the measured coercive field is similar to the one observed in other BCZT films deposited in STO substrates. 22 In addition, the difference between the coercive fields obtained from the P-E loops and from the PFM measurements can be related to the different top electrical boundary conditions (PFM uses a silicon probe with Pt coating, while P-E loop measurements uses Au electrodes).…”

“…The asymmetric shape of the hysteresis loops is due to the difference in work functions between the bottom (Nb:STO) and top (Pt) electrodes. 19,20 The saturation is reached above 5 Vdc, and the local coercive voltages (V c ) are taken as the minima of amplitude loop 20 and are found to be approximately À0.9 and þ1.8 V. The coercive field (E c ) was estimated by using the relation V c ¼ E c .t, 21 where t is the thickness of the BCZT film and was estimated to be %81 kV cm À1 . Figure 4(a) exhibits the room temperature electric field dependent polarization-electric field (P-E) hysteresis loops of the BCZT film.…”

Ultrahigh Energy Storage Performance of Lead‐Free Oxide Multilayer Film Capacitors via Interface Engineering

“…The enhancement of W reco with the increase of interface numbers is significant and mainly originates from the enhanced breakdown strength induced by the interface blocking effect on the electric trees. The energy storage density of 52.4 J cm −3 achieved in the N = 8 multilayer is much higher than that reported in other Pb‐free materials, and is comparable with most of the Pb‐based systems . The corresponding comparison have been shown in details in Table S2 (Supporting Information).…”

Progress, Outlook, and Challenges in Lead‐Free Energy‐Storage Ferroelectrics

“…Before the author's work, (1−x)BaZr 0.2 Ti 0.8 O 3 xBa 0.7 Ca 0.3 TiO 3 ((1−x)BZT-xBCT) thin film grown on La 0.5 Sr 0.5 CoO 3 (LSCO) coated (001) MgO substrate by pulsed laser deposition (PLD) technique has been reported to have the ESD of 39.11 J cm −3 . [162] To enlarge the c/a ratio for lower P r , radio frequency magnetron sputtering (RFMS) has been employed by the author to fabricate BaZr 0.2 Ti 0.8 O 3 (BZT) thin film on (001) STO substrate because of its long but stable growth time. As shown in Figure 20a, ESD and E B of 30.4 J cm −3 and 3.5 MV cm −1 with good thermal stability and fatigue behavior from RT to 125 °C has been obtained.…”