Abstract:Ultrahigh energy storage density of 52.4 J cm with optimistic efficiency of 72.3% is achieved by interface engineering of epitaxial lead-free oxide multilayers at room temperature. Moreover, the excellent thermal stability of the performances provides solid basis for widespread applications of the thin film systems in modern electronic and power modules in harsh working environments.
“…The energy densities and efficiency of the BFSTO films are compared with those of representative lead-based and lead-free material systems reported previously, as displayed in Fig. 3c 10–12,28–33 . The results evidently show that the energy densities of the BFSTO films are superior to those of other reported lead-free systems (35% over the best BTO-based systems 12 ) and rival the lead-based materials.…”
Section: Resultsmentioning
confidence: 99%
“…3c 10–12,28–33 . The results evidently show that the energy densities of the BFSTO films are superior to those of other reported lead-free systems (35% over the best BTO-based systems 12 ) and rival the lead-based materials. Additionally, the concomitantly achieved high efficiency makes the BFSTO films more attractive for energy storage applications.Fig.…”
Section: Resultsmentioning
confidence: 99%
“…a Discharged energy density and b efficiency of the BFSTO films as a function of the applied electric field. c Comparisons of energy density and efficiency between BFSTO and representative dielectric systems 10–12,28–33 , showing that the BFSTO films possess the most outstanding energy storage performance. d Energy density and efficiency for x = 0.60 and 0.75 at an electric field of 2.5 MV cm −1 over 1 × 10 7 charging-discharging cycles.…”
Section: Resultsmentioning
confidence: 99%
“…Some promising cases have been reported to date, among which the majority are modified BaTiO 3 (BTO)-based RFE films. For instance, U e values of ~37 J cm −3 in 0.88BaTiO 3 −0.12Bi(Mg,Ti)O 3 films 11 and ~52 J cm −3 in Ba 0.7 Ca 0.3 TiO 3 -BaZr 0 .2 Ti 0.8 O 3 super-lattices 12 have been reported recently. Nevertheless, there are still some drawbacks in those BTO-based RFEs that inhibit further improvements.…”
Developing high-performance film dielectrics for capacitive energy storage has been a great challenge for modern electrical devices. Despite good results obtained in lead titanate-based dielectrics, lead-free alternatives are strongly desirable due to environmental concerns. Here we demonstrate that giant energy densities of ~70 J cm−3, together with high efficiency as well as excellent cycling and thermal stability, can be achieved in lead-free bismuth ferrite-strontium titanate solid-solution films through domain engineering. It is revealed that the incorporation of strontium titanate transforms the ferroelectric micro-domains of bismuth ferrite into highly-dynamic polar nano-regions, resulting in a ferroelectric to relaxor-ferroelectric transition with concurrently improved energy density and efficiency. Additionally, the introduction of strontium titanate greatly improves the electrical insulation and breakdown strength of the films by suppressing the formation of oxygen vacancies. This work opens up a feasible and propagable route, i.e., domain engineering, to systematically develop new lead-free dielectrics for energy storage.
“…The energy densities and efficiency of the BFSTO films are compared with those of representative lead-based and lead-free material systems reported previously, as displayed in Fig. 3c 10–12,28–33 . The results evidently show that the energy densities of the BFSTO films are superior to those of other reported lead-free systems (35% over the best BTO-based systems 12 ) and rival the lead-based materials.…”
Section: Resultsmentioning
confidence: 99%
“…3c 10–12,28–33 . The results evidently show that the energy densities of the BFSTO films are superior to those of other reported lead-free systems (35% over the best BTO-based systems 12 ) and rival the lead-based materials. Additionally, the concomitantly achieved high efficiency makes the BFSTO films more attractive for energy storage applications.Fig.…”
Section: Resultsmentioning
confidence: 99%
“…a Discharged energy density and b efficiency of the BFSTO films as a function of the applied electric field. c Comparisons of energy density and efficiency between BFSTO and representative dielectric systems 10–12,28–33 , showing that the BFSTO films possess the most outstanding energy storage performance. d Energy density and efficiency for x = 0.60 and 0.75 at an electric field of 2.5 MV cm −1 over 1 × 10 7 charging-discharging cycles.…”
Section: Resultsmentioning
confidence: 99%
“…Some promising cases have been reported to date, among which the majority are modified BaTiO 3 (BTO)-based RFE films. For instance, U e values of ~37 J cm −3 in 0.88BaTiO 3 −0.12Bi(Mg,Ti)O 3 films 11 and ~52 J cm −3 in Ba 0.7 Ca 0.3 TiO 3 -BaZr 0 .2 Ti 0.8 O 3 super-lattices 12 have been reported recently. Nevertheless, there are still some drawbacks in those BTO-based RFEs that inhibit further improvements.…”
Developing high-performance film dielectrics for capacitive energy storage has been a great challenge for modern electrical devices. Despite good results obtained in lead titanate-based dielectrics, lead-free alternatives are strongly desirable due to environmental concerns. Here we demonstrate that giant energy densities of ~70 J cm−3, together with high efficiency as well as excellent cycling and thermal stability, can be achieved in lead-free bismuth ferrite-strontium titanate solid-solution films through domain engineering. It is revealed that the incorporation of strontium titanate transforms the ferroelectric micro-domains of bismuth ferrite into highly-dynamic polar nano-regions, resulting in a ferroelectric to relaxor-ferroelectric transition with concurrently improved energy density and efficiency. Additionally, the introduction of strontium titanate greatly improves the electrical insulation and breakdown strength of the films by suppressing the formation of oxygen vacancies. This work opens up a feasible and propagable route, i.e., domain engineering, to systematically develop new lead-free dielectrics for energy storage.
“…Besides, the dielectric performances of the multilayer composites could be easily tailored via designing their structures, such as number of layers, stacking sequences, and layer thickness. Wang et al [54] demonstrated that by increasing the number of Pb-free Ba 0.7 Ca 0.3 TiO 3 -BaZr 0.2 Ti 0.8 O 3 (BCT-BZT) layers, the multilayer composites exhibited improved dielectric properties at low frequency compared with BCT and BZT single layers. Wei et al [55] experimentally demonstrated that the thickness of NiFe plays significant roles in determining the dielectric properties of ZnO/NiFe/ZnO heterojunction films, and the most optimal characteristics could be obtained when the thickness of inserted NiFe layer is 30 nm.…”
The search for high-performance dielectric materials has long been driven by the urgent needs for various modern electronics. However, enhanced permittivity is always accompanied by elevated loss, which seriously hinders the development and applications of dielectric materials. Herein, negative-k layers were introduced into layer-structured films, forming a new class of multilayer composites consisting of alternately stacked positive-k and negative-k layers. Compared with traditional multilayer composites without negative-k layers, the layered composites containing extra positive-k/negative-k interfaces exhibit superior ability in balancing the contradict parameters: permittivity and loss, yielding substantially enhanced permittivity without sacrificing the low loss. It is indicated that the permittivity was enhanced by the charge accumulations and reinforced polarizations on the interfaces between positive-k and negative-k layers. Meanwhile, the loss induced by the leakage current was suppressed by the blocked transport of carriers between adjacent layers. The trilayered 60-3.5-60 composite exhibits an enhanced dielectric constant (ε′ ≈ 33 @10 kHz) and retained low loss (tanδ ≈ 0.12 @10 kHz) compared with the single-layer BT/PVA composite containing 60 wt% BT fillers (ε′ ≈ 9.5 @10 kHz, tanδ ≈ 0.075 @10 kHz). This research offers an effective way to design and fabricate novel high-performance dielectric materials.
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