Nanoscale n-channel and ambipolar organic field-effect transistors

Jung, Taeho; Yoo, Byung Woo; Wang, Liang; Dodabalapur, Ananth; Jones, Brian; Facchetti, Antonio; Wasielewski, Michael R.; Marks, Tobin J.

doi:10.1063/1.2200591

Cited by 41 publications

(25 citation statements)

References 18 publications

(19 reference statements)

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“…[217] Studies of pentacene films by conducting-probe AFM showed that both electrons and holes could be injected into pentacene monolayer islands, and that both carrier types delocalized throughout the island. [218] Early approaches to ambipolar transistors have used 22 as the p-type material in bilayer devices-these are typically fabricated using either a fullerene [219] or perylene diimide [220] as the n-type material. However, in these cases 22 is exploited for its high hole, rather than eletron, mobility.…”

Section: Stabilitymentioning

confidence: 99%

The Larger Acenes: Versatile Organic Semiconductors

2007

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Acenes have long been the subject of intense study because of the unique electronic properties associated with their pi-bond topology. Recent reports of impressive semiconductor properties of larger homologues have reinvigorated research in this field, leading to new methods for their synthesis, functionalization, and purification, as well as for fabricating organic electronic components. Studies performed on high-purity acene single crystals revealed their intrinsic electronic properties and provide useful benchmarks for thin film device research. New approaches to add functionality were developed to improve the processability of these materials in solution. These new functionalization strategies have recently allowed the synthesis of acenes larger than pentacene, which have hitherto been largely unavailable and poorly studied, as well as investigation of their associated structure/property relationships.

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Section: Stabilitymentioning

confidence: 99%

The Larger Acenes: Versatile Organic Semiconductors

2007

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“…[217] Kraftmikroskopische Untersuchungen ergaben, dass sowohl Elektronen als auch Löcher in Inseln in Pentacenmonoschichten injiziert werden können und beide Ladungsträgertypen über die Inseln delokalisiert sind. [218] Um ambipolare Transistoren zu erhalten, wurde 22 schon früher als p-Halbleiter in Doppelschichttransistoren eingesetzt, die zumeist Fullerene [219] oder Perylendiimid [220] als n-Halbleiter enthielten. Entscheidend war hierbei die hohe Beweglichkeit der Löcher (und nicht der Elektronen) in 22.…”

Section: Stabilitätunclassified

Höhere Acene: vielseitige organische Halbleiter

Anthony

2007

Angewandte Chemie

482

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Acene werden wegen ihrer einzigartigen elektronischen Eigenschaften, die auf der Topologie ihrer π‐Systeme beruhen, seit langem untersucht. Berichte über die bemerkenswerten Halbleitereigenschaften höherer Homologe haben in letzter Zeit zu verstärkten Forschungsaktivitäten geführt. Es wurden neue Verfahren zur Synthese, Funktionalisierung und Reinigung sowie zur Herstellung organoelektronischer Bauteile entwickelt. Durch Untersuchungen an hochreinen Acen‐Einkristallen wurden die charakteristischen elektronischen Eigenschaften und Kenngrößen für die Beurteilung von Dünnschichtbauteilen ermittelt. Um die Verarbeitbarkeit in Lösung zu verbessern, wurden neuartige Funktionalisierungsmethoden entwickelt. Die für elektronische Anwendungen erwünschten Eigenschaften nichtfunktionalisierter Acene bleiben bei der Funktionalisierung erhalten. Mit diesen Verfahren wurden kürzlich Derivate höherer Acene als Pentacen, die zuvor kaum zugänglich waren, erhalten, sodass Struktur‐Eigenschafts‐Beziehungen untersucht werden konnten.

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“…We investigated the recently introduced PDI-8CN 2 [5][6][7][8][9][10][11] with the chemical structure shown in Fig. 1.…”

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Kelvin‐probe studies of n‐conductive organic field‐effect transistors during operation

Lüttich

Lehmann

Graaf

et al. 2010

Phys. Status Solidi (c)

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We report on our investigations of the structural and electronic properties of n‐conductive organic field‐effect transistors (OFETs). For this purpose we employed the atomic force microscopy (AFM) and Kelvin‐probe force microscopy (KPFM) in dual frequency mode. This study facilitates the determination of the local potential in the channel of active OFETs. We studied the influence of insulator treatment on the electrical potential and field distribution within the channel using a self‐assembled monolayer of N‐octadecyltrichlorosilane (OTS). For the investigated OFETs we used air‐stable and electron conducting N,N′‐bis(n‐octyl)‐dicyanoperylene‐3,4:9,10‐bis(dicarboximide) (PDI‐8CN2). It appears that the insulator treatment improves the performance even if the surface topography did not change. These results can lead to a better understanding of the charge transport and injection and pave the way towards the optimisation of the electronical properties of active organic devices (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Nanoscale n-channel and ambipolar organic field-effect transistors

Abstract: Articles you may be interested inElectrical characteristics of single-component ambipolar organic field-effect transistors and effects of air exposure on them

Cited by 41 publications

References 18 publications

The Larger Acenes: Versatile Organic Semiconductors

The Larger Acenes: Versatile Organic Semiconductors

Höhere Acene: vielseitige organische Halbleiter

Kelvin‐probe studies of n‐conductive organic field‐effect transistors during operation

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