Nanoscale memristive radiofrequency switches

Abstract

Radiofrequency switches are critical components in wireless communication systems and consumer electronics. Emerging devices include switches based on microelectromechanical systems and phase-change materials. However, these devices suffer from disadvantages such as large physical dimensions and high actuation voltages. Here we propose and demonstrate a nanoscale radiofrequency switch based on a memristive device. The device can be programmed with a voltage as low as 0.4 V and has an ON/OFF conductance ratio up to 10 12 with long state retention. We measure the radiofrequency performance of the switch up to 110 GHz and demonstrate low insertion loss (0.3 dB at 40 GHz), high isolation (30 dB at 40 GHz), an average cutoff frequency of 35 THz and competitive linearity and power-handling capability. Our results suggest that, in addition to their application in memory and computing, memristive devices are also a leading contender for radiofrequency switch applications.

Analysis of the Negative-SET Behaviors in Cu/ZrO2/Pt Devices

“…The resistive switching (RS) phenomenon, occurred in resistive random access memory (RRAM) also named memristive device, has been widely studied for various applications [1–7]. The binary metal oxide RRAM, which consists of an insulating layer sandwiched between two metal electrodes, has been considered one of the most promising candidate for the next-generation non-volatile memory due to the simple structure and high performance [8–10].…”

Trilayer Tunnel Selectors for Memristor Memory Cells

“…Although individual devices with sub‐10 nm feature sizes and promising switching characteristics have been demonstrated,3, 4 the leakage current through unselected devices during WRITE and/or READ operations limits the size of the array and thus the bit density of a NVM die. Thus, unless the memristor itself has a large intrinsic nonlinear current–voltage ( i–v ) response, some type of selector is required in series with the switch in a memory cell to form the so‐called 1S1R configuration.…”

Memristive nanodevices: CMOS compatibility and novel applications

“…Typical transmission spectra of a device at ON state (c) and OFF state (d) that shows 0.3 dB insertion loss and 30 dB isolation at 40 GHz. [16] …”

“…6) that are separated by a nanoscale airgap. The ON and OFF states are achieved by the formation and rupture of a 100 nm wide silver filament inside the gap [16]. The device showed hysteretic IV loops, a signature of memristive devices.…”