Nanoscale InGaAs concave disks fabricated by heterogeneous droplet epitaxy

Mano, Takaaki; Tsukamoto, Shiro; Koguchi, Nobuyuki; Fujioka, Hiroshi; Oshima, Masaharu; Lee, Chae-Deok; Leem, Jae‐Young; Lee, Hwack Joo; Noh, Sam Kyu

doi:10.1063/1.126701

Cited by 66 publications

(37 citation statements)

References 16 publications

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“…The QD2 PL peaks at 1.285 eV and the HWHM is 11 meV at T =10 K. More details on the HDE-QD growth may be found in Ref. 19. The experimental data are reported in Figs.…”

Section: Resultsmentioning

confidence: 78%

“…QD2 is an InGaAs/ GaAs QD structure grown without a WL by taking advantage of a modified MBE method, the heterogeneous droplet epitaxy ͑HDE͒. 18,19 The HDE growth method permits the assembling of nanometer size InGaAs inclusions in a GaAs matrix. The typical dimensions of the HDE-QDs are 30 nm base width and 12 nm height and the average In content of the QD is around 20%.…”

Section: Resultsmentioning

confidence: 99%

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Quantum dot decoherence measured by ensemble photoluminescence

Gurioli

Sanguinetti

Mano

et al. 2005

Journal of Applied Physics

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Document VersionPublisher's PDF, also known as Version of Record (includes final page, issue and volume numbers)Please check the document version of this publication:• A submitted manuscript is the author's version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal ? Take down policyIf you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim. We propose and experimentally demonstrate that a very simple, noninvasive, and common technique, i.e., standard nonresonant photoluminescence of large ensemble of quantum dots ͑QDs͒, can be used to determine the temperature dependence of homogeneous broadening. The method can be applied to a single quantum dot layer independently of the QD density and it allows to follow the increase of the homogeneous broadening up to high T. The experimental results show that different pictures apply depending on the QD size.

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“…The QD2 PL peaks at 1.285 eV and the HWHM is 11 meV at T =10 K. More details on the HDE-QD growth may be found in Ref. 19. The experimental data are reported in Figs.…”

Section: Resultsmentioning

confidence: 78%

Section: Resultsmentioning

confidence: 99%

Quantum dot decoherence measured by ensemble photoluminescence

Gurioli

Sanguinetti

Mano

et al. 2005

Journal of Applied Physics

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“…The droplet epitaxy (DE) method has the merit of the growth of various quantum structures, such as quantum rings, disks, coupled QDs, and concentric quantum double rings, as well as low-density QDs, due to a perfect separation of groups 3 and 5 [12][13][14][15]. In addition, larger GaAs DE QDs can be grown on AlGaAs without strain effect, for larger oscillation strength, compared with InAs QDs on GaAs.…”

Section: Introductionmentioning

confidence: 99%

Structural and optical properties of position-retrievable low-density GaAs droplet epitaxial quantum dots for application to single photon sources with plasmonic optical coupling

Lee¹,

Song²,

Han³

et al. 2016

Nano Online

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The position of a single GaAs quantum dot (QD), which is optically active, grown by low-density droplet epitaxy (DE) (approximately 4 QDs/μm 2 ), was directly observed on the surface of a 45-nm-thick Al 0.3 Ga 0.7 As capping layer. The thin thickness of AlGaAs capping layer is useful for single photon sources with plasmonic optical coupling. A micro-photoluminescence for GaAs DE QDs has shown exciton/biexciton behavior in the range of 1.654 to 1.657 eV. The direct observation of positions of low-density GaAs DE QDs would be advantageous for mass fabrication of devices that use a single QD, such as single photon sources.

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“…Although the StranskiKrastanow (S-K) growth mode is often used for such self-assembly [4,5], it can only be applied to lattice-mismatched systems like In(Ga)As/GaAs for which the lattice constant of the three-dimensional nanostructure (In(Ga)As) is different from that of the substrate (GaAs). On the other hand, the droplet epitaxy is applicable not only to the lattice-mismatched systems [6,7] but also to lattice-matched systems like GaAs/AlGaAs [8]. The lattice-matched systems are strain free in principle, and hence, have simpler and more isotropic electronic structures than the lattice-mismatched systems.…”

Section: Introductionmentioning

confidence: 99%

Self-assembly of quantum dots and rings by droplet epitaxy and their optical properties

Mano

Kuroda

et al. 2009

J. Nanophoton

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Abstract.Developments in the self-assembly by droplet epitaxy in our research group have enabled us to fabricate various GaAs quantum nanostructures of high optical quality such as quantum dots, single quantum rings, and concentric double quantum rings. We clarified their electronic states and relaxation processes by micro photoluminescence experiments. We achieved lasing of lattice-matched GaAs quantum dots and their excitonic Rabi oscillation by resonant excitation. We succeeded in the control of their photon emission rate by photonic crystal micro cavities.

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Nanoscale InGaAs concave disks fabricated by heterogeneous droplet epitaxy

Cited by 66 publications

References 16 publications

Quantum dot decoherence measured by ensemble photoluminescence

Quantum dot decoherence measured by ensemble photoluminescence

Structural and optical properties of position-retrievable low-density GaAs droplet epitaxial quantum dots for application to single photon sources with plasmonic optical coupling

Self-assembly of quantum dots and rings by droplet epitaxy and their optical properties

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