We demonstrate the self-assembled formation of concentric quantum double rings with high uniformity and excellent rotational symmetry using the droplet epitaxy technique. Varying the growth process conditions can control each ring's size. Photoluminescence spectra emitted from an individual quantum ring complex show peculiar quantized levels that are specified by the carriers' orbital trajectories.

We propose a modified droplet epitaxy method for fabricating self-organized GaAs/AlGaAs quantum dots (QDs) with a high As flux irradiation and a low substrate temperature. By our novel method, GaAs QDs were successfully formed, retaining their pyramidal shape, original base size and density of droplets, and preventing layer-by-layer growth. Quantum size effects of the QDs were distinctly observed by photoluminescence measurements. It was confirmed that this new modified droplet epitaxy method is promising for fabricating a high-quality GaAs/AlGaAs QD system.

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Making use of a droplet-epitaxial technique, we realize nanometer-sized quantum ring complexes, consisting of a well-defined inner ring and an outer ring. Electronic structure inherent in the unique quantum system is analyzed using a micro-photoluminescence technique. One advantage of our growth method is that it presents the possibility of varying the ring geometry. Two samples are prepared and studied: a single-wall ring and a concentric double-ring. For both samples, highly efficient photoluminescence emitted from a single quantum structure is detected. The spectra show discrete resonance lines, which reflect the quantized nature of the ringtype electronic states. In the concentric double-ring, the carrier confinement in the inner ring and that in the outer ring are identified distinctly as split lines. The observed spectra are interpreted on the basis of single electron effective mass calculations.