Nanoscale Epitaxial Lateral Overgrowth of GaN-Based Light-Emitting Diodes on an AlN Nanorod-Array Template

Suppressing the Initial Growth of Sidewall GaN by Modifying Micron-Sized Patterned Sapphire Substrate with H3PO4-Based Etchant

“…An AlN (or GaN) nucleation layer (NL) is commonly introduced prior to growth of GaN epilayer to overcome this lattice mismatch problem [3,4]. Moreover, micron-sized patterned sapphire substrates (PSS) have been successfully used to reduce these defects and enhance the performance of LEDs [5,6,7,8,9,10,11,12].…”

Carbon-nanotube-assisted nanoepitaxy of Si-doped GaN for improved performance of InGaN/GaN light-emitting diodes

“…Numerous approaches have been employed to improve the light emission from InGaN/GaN quantum-well structures via dislocation and strain management [17][18][19][20][21][22][23][24][25][26][27][28][29][30]. The most promising method that has been developed for reducing the dislocations is the epitaxial lateral overgrowth [20], which originally made use of a lithographically-patterned dielectric layer (SiO 2 or Si 3 N 4 ) as a mask on the sapphire to allow selective epitaxy.…”

“…However, the application of such materials is limited because it requires thick overgrowth to coalesce the wing areas which as a result contain threading dislocations at the coalesced boundaries and of the spatial inhomogeneity in stress and defects that they bring in as a result of two different growth modes involved. Alternatively, lateral growth with the use of substrate patterning [21] or nanostructures [19,22,23,29,30] and threedimensional (3D) growth by an in situ-grown masking layer [3] have attracted special interest. Recently, two-dimensional (2D) layered materials including graphene and boron nitride have also been brought into effect owing to their hightemperature stability and low surface energy [24,25].…”