Carbon-nanotube-assisted nanoepitaxy of Si-doped GaN for improved performance of InGaN/GaN light-emitting diodes

Park, Ah Hyun; Chandramohan, S.; Seo, Tae Hoon; Lee, Byong‐Taek; Min, Kyung Hyun; Hong, Chang–Hee; Kim, Myung Jong; Suh, Eun‐Kyung

doi:10.1088/0957-4484/27/27/275602

Cited by 4 publications

(1 citation statement)

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“…The IQE values are estimated to be 32 and 60% for the conventional LED epilayers and LED epilayers grown on the DSE porous GaN buffer layer, respectively. The higher activation energy and the enhanced IQE strongly supports the improved radiative recombination in MQWs grown on defect free, stress relaxed GaN buffer layer, which can offer a better overlapping between the electron and hole wavefunctions in InGaN/GaN MQWs [ 16 , 46 ].…”

Section: Resultsmentioning

confidence: 99%

Defect-selective-etched porous GaN as a buffer layer for high efficiency InGaN/GaN light-emitting diodes

Park¹,

Baek

Kim

et al. 2022

PLoS ONE

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Substrate-induced biaxial compressive stress and threading dislocations (TDs) have been recognized to severely impair the performance, stability, and reliability of InGaN/GaN light-emitting diodes (LEDs) for quite some time. In this study, a defect-selective-etched (DSE) porous GaN layer is fabricated employing electro-chemical etching and applied as a buffer layer for the development of InGaN/GaN LEDs with high quantum efficiency. Based on the analysis of photoluminescence and micro-Raman spectra, it has been revealed that the overgrown GaN epilayer on the DSE porous GaN has a relatively low TDs and relaxation of compressive stress in comparison to the conventional GaN epilayer. The remarkable improvement in the internal quantum efficiency of the InGaN/GaN LEDs is directly attributable to the strong radiative recombination in InGaN/GaN multi-quantum-wells caused by stress relaxation and TDs annihilation. Our findings indicate that the use of DSE porous GaN as a buffer layer may be a viable approach for producing crystalline GaN epilayers and high-performance LEDs.

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Section: Resultsmentioning

confidence: 99%

Defect-selective-etched porous GaN as a buffer layer for high efficiency InGaN/GaN light-emitting diodes

Park¹,

Baek

Kim

et al. 2022

PLoS ONE

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Effect of High Al Content AlGaN Buffer Layer on the Properties of GaN‐on‐Silicon Materials

Liu,

Wang,

Nie

et al. 2023

Physica Status Solidi (a)

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The lattice parameter and thermal expansion coefficient mismatch between the silicon substrate and GaN lead to high tensile stress, which makes the GaN epitaxial layer prone to cracking. Effective compensation of tensile stress on GaN to prevent cracking is an important issue in GaN epitaxial growth. In this work, GaN‐on‐silicon materials with different AlGaN buffer layer structures are prepared by metal‐organic chemical vapor deposition (MOCVD). The GaN epitaxial material with smooth and crack‐free surface is fabricated by inserting 7 AlGaN buffer layers. The crystal quality of GaN is characterized using high resolution X‐ray diffraction (HRXRD). The full‐width half maximum (FWHM) value of GaN(002) and GaN(102) crystal plane is 398 arcsec and 780 arcsec, respectively. The surface root mean square (RMS) roughness of GaN material is 0.31 nm, and the vertical breakdown voltage (BV) of the epitaxial wafer reaches 918 V. The results show that high Al content of the AlGaN buffer layer can effectively reduce the tensile stress and dislocation density of the GaN layer when the entire AlGaN layer thickness remains constant. Suppressing the generation of surface cracks and improving the crystal quality can improve the vertical breakdown voltage and two‐dimensional electron gas (2‐DEG) characteristics of GaN epitaxial wafers.This article is protected by copyright. All rights reserved.

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Stress and dislocation control of GaN epitaxial films grown on Si substrates and their application in high-performance light-emitting diodes

Wang

et al. 2019

Journal of Alloys and Compounds

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Carbon-nanotube-assisted nanoepitaxy of Si-doped GaN for improved performance of InGaN/GaN light-emitting diodes

Cited by 4 publications

References 50 publications

Defect-selective-etched porous GaN as a buffer layer for high efficiency InGaN/GaN light-emitting diodes

Defect-selective-etched porous GaN as a buffer layer for high efficiency InGaN/GaN light-emitting diodes

Effect of High Al Content AlGaN Buffer Layer on the Properties of GaN‐on‐Silicon Materials

Stress and dislocation control of GaN epitaxial films grown on Si substrates and their application in high-performance light-emitting diodes

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