2009
DOI: 10.1109/tmtt.2009.2034071
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Nanoscale CMOS Transceiver Design in the 90–170-GHz Range

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Cited by 106 publications
(27 citation statements)
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“…A 170-GHz SiGe low-noise amplifier having up to 25 dB of gain was developed in 2010 [91]. Low-noise amplifiers in the 140-150-GHz range fabricated in 65-nm CMOS have been reported [91], [93], [94]. Other examples of SiGe circuits operating over 100 GHz exist in the literature [95], [96].…”
Section: Emerging Technologiesmentioning
confidence: 99%
“…A 170-GHz SiGe low-noise amplifier having up to 25 dB of gain was developed in 2010 [91]. Low-noise amplifiers in the 140-150-GHz range fabricated in 65-nm CMOS have been reported [91], [93], [94]. Other examples of SiGe circuits operating over 100 GHz exist in the literature [95], [96].…”
Section: Emerging Technologiesmentioning
confidence: 99%
“…This contributes to the prosperity of the research in CMOS MMW circuit designs. As a result, in recent years, MMW transmitters and receivers are reported in CMOS technologies including multi-port transceiver [199], direct-conversion transceiver [191,200], Doppler radar transceiver [201][202][203], phased-array transceiver [204,205] and differential transceiver [166]. The earliest 60 GHz CMOS transceiver for gigabit software-defined transceivers was demonstrated using 0.13-μm bulk CMOS technology in [199].…”
Section: Cmos Mmw Transceiversmentioning
confidence: 99%
“…The chip size of single channel and two transmitters are 1. Furthermore, in [202], the Doppler radar transceiver has a down-conversion gain of 16 dB and an NF of 7-9 dB over an IF bandwidth of 17 GHz. The transmitter output power, as measured at the output of one of the two PAs, varies between +1 and +3 dBm over the VCO tuning range of 90.6-93.5 GHz.…”
Section: Cmos Mmw Transceiversmentioning
confidence: 99%
“…While the propagation loss limits the practicable operating range of 60-GHz radio systems, it also increases frequency reuse in an indoor dense local network, reduces cochannel interference, and improves the safety of a secure short-range pointto-point link by providing additional spatial isolation [103], [104]. Because of its suitability for short-range high throughput wireless connectivity, the to their high unity current gain frequency and high maximum frequency of oscillation [105], [106]. As a result of this technological development, it has become feasible to realize millimeter-wave ICs in a standard CMOS process, which makes possible a high level of integration and reduces the cost of high-volume production.…”
Section: Wireless Communication Systemsmentioning
confidence: 99%