Nanoscale BixTe3/Sb2Te3 multilayer thin film materials for reduced thermal conductivity

MeV Si ions bombardment effects on the thermoelectric properties of Co0.1SbxGey thin films

“…The electrical conductivity, thermal conductivity and Seebeck coefficient measurements have been performed at room temperature. Detailed information about the 3x technique may be found in [12][13][14]. The 5 MeV Si ion bombardments were performed with the Pelletron ion beam accelerator at the Alabama A&M University Center for Irradiation of Materials (AAMU-CIM).…”

Effects of MeV Si ions bombardments on thermoelectric properties of sequentially deposited BixTe3/Sb2Te3 nano-layers

“…The lowest thermal conductivity was found at the fluence of 7 · 10 14 ions/cm 2 and the highest electrical conductivity was found at the same fluence. RBS measurement was performed using 2.1 MeV He + ions in an IBM scattering geometry with the particle detector placed at 170°from the incident beam to monitor the film thickness and stoichiometry before and after 5 MeV Si ions bombardments [1,10,11].…”

“…Thermoelectric materials are being important due to their application in both thermoelectric power generation and microelectronic cooling [1]. The major problem with the thermoelectric devices is poor efficiency.…”

Effects of MeV Si ions bombardment on the thermoelectric properties of Zn4Sb3 and CeFe2Co2Sb12 thin films

“…ZT can be increased by increasing S, increasing σ, or decreasing κ. Efficient thermoelectric devices have a high electrical conductivity and a decreased thermal conductivity [10].…”