Effects of MeV Si ions bombardments on thermoelectric properties of sequentially deposited BixTe3/Sb2Te3 nano-layers

Surface modification of Si/Ge multi-layers by MeV Si ion bombardment

“…This causes some interface scattering and absorption of phonons. Scattering and absorption of phonons cause decrease in thermal conductivity [3]. The decrease in the thermal conductivity is one of the expected properties from the good thermoelectric material and devices.…”

“…Thermoelectric power generators and coolers have many advantages over conventional refrigerators and power generators such as solid-state operation, compact design, vast scalability, zero-emissions and long operating lifetime with no maintenance [2]. The performance of a thermoelectric device is quantified by the dimensionless figure of merit ZT =S 2 σT /K where S is the Seebeck coefficient, σ is the electrical conductivity, T is the absolute temperature and K is the thermal conductivity [3]. The increase in ZT leads directly to improvement in the energy conversion efficiency of TE generators and in the cooling efficiency of Peltier modules [4].…”

MeV Si ions bombardment effects on the thermoelectric properties of Co0.1SbxGey thin films

“…The performance of any thermoelectric substance is evaluated by the dimensionless figure of merit expression ZT = S 2 rT/j, where S, r, j and T are the Seebeck coefficient (V/K), electrical conductivity (X À1 m À1 ), thermal conductivity (W/mK) and absolute temperature (K), respectively [9][10][11].…”

Preparation and thermoelectric properties of p-type Bi0.52Sb1.48Te3 + 3% Te thin films

“…It is apparent that improvements in the thermoelectric figure of merit are possible by increasing S and σ, and by decreasing the thermal conductivity. [18]. In this work, because of the simple configuration of the deposition system, we use a flash evaporation method [19][20][21][22] for the fabrication of Bi 2 Te 3 -based alloy thin films.…”

“…Lowdimensional Bi 2 Te 3 -based materials, which show special quantum confinement effects and electrical transport properties [4], have proved to be an effective route for improving thermoelectric properties [5]. Many deposition methods have been used to prepare Bi 2 Te 3 -based thin films; these include co-evaporation [6,7], metal organic chemical vapor deposition [8], pulsed laser deposition [9,10], electrochemical deposition [11,12], electrochemical atomic layer epitaxy [13,14], molecular beam epitaxy [15], co-sputtering [16], closed space vapor transport techniques [17], hotwall-epitaxy techniques, and electron-beam evaporation [18]. In this work, because of the simple configuration of the deposition system, we use a flash evaporation method [19][20][21][22] for the fabrication of Bi 2 Te 3 -based alloy thin films.…”