Nanoporous silicon structure with graphene coating

Старков, В. В.; Gosteva, E. A.; Sedlovets, Daria M.; Belоrus, Anton O.

doi:10.1016/j.micromeso.2021.110981

Cited by 5 publications

(5 citation statements)

References 10 publications

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“…The starting point in the high frequency region of the Nyquist plot (see inset in Figure 3b) corresponded to the resistance of the cell: 3Ω and 2Ω for the measurements of por-Si and por-Si + GLC electrodes, respectively. Therefore, the GLC-coated sample had less electrical resistance than uncoated por-Si, which was consistent with earlier studies [35]. Figure 3b shows the results of measurements for only one sample, but the described patterns were observed for all of them (see SM, Section S6).…”

Section: Measurements and Eissupporting

confidence: 89%

“…It could be seen that the capacitance increased significantly after GLC deposition (2-2.5 times). This improvement might be attributed to the increase in specific surface area after GLC deposition which was observed in the work [35]. The nanocrystalline structure of the GLC also matters: numerous graphene grain boundaries act as charge sites (reaction centers).…”

Section: Measurements and Eismentioning

confidence: 70%

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Nanoporous Silicon with Graphene-like Coating for Pseudocapacitor Application

et al. 2022

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This paper presents the results of studies of the nanoporous silicon structure, both with different pore depths (up to 180 μm) and with layers in which a graphene-like coating was synthesized on the inner surface of the pores. The nanoporous layers were characterized by SEM as well as IR and Raman spectroscopy. Cyclic voltammetry and galvanostatic charge–discharge data in 3 M H2SO4 are presented as well as the results of the cyclic stability of these characteristics for the nanoporous structure. It was found that the degree of electrolyte pre-impregnation significantly affected the electrochemical processes, and the capacitance values depended on the depth (thickness) of the nanoporous layer. Increasing the thickness of the porous layer led to an increase in area-normalized pseudocapacity and was limited only by the mechanical strength of the structure. Performance improvement was also achieved by synthesis of the graphene-like layer in the volume of the nanoporous structure. The electrodes (composite materials) proposed in the work showed one of the best capacitive characteristics (87 mF/cm2 with 100% capacity retention after 15,000 cycles) in comparison with the data reported in the literature at present.

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Section: Measurements and Eissupporting

confidence: 89%

Section: Measurements and Eismentioning

confidence: 70%

Nanoporous Silicon with Graphene-like Coating for Pseudocapacitor Application

et al. 2022

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“…The electron diffraction pattern (Figure 2b) indicates that the structure of the surface NPSi layer is amorphous (α-Si). As noted in [6,14,16], the formation of the surface nanostructure of the amorphous silicon layer, as well as the complete or partial filling of the volume of the silicon skeleton, is associated with the disproportionation reaction (deposition of silicon atoms on the surface). This process proceeds at the given anodic etching current densities and electrolyte compositions to a greater or lesser extent, depending on the specific resistance of silicon.…”

Section: Nanostructured Layers Of Gps-var Structuresmentioning

confidence: 96%

“…Formation features and morphological characteristics of gradient-porous silicon structure with variable pore morphology were set out in [14,16]. For GPS-var, the structure is characterized by the presence of a nanoporous layer on the surface.…”

Section: Nanostructured Layers Of Gps-var Structuresmentioning

confidence: 99%

“…In porous structures formed on silicon with higher resistance, NPSi is observed mainly in the near-surface macroporous layer, with a thickness 1-3 µm [14]. As noted in [6,14,16], the formation of both the surface nanostructure of the amorphous silicon layer and the complete or partial filling of the volume of the silicon skeleton are associated with the disproportionation reaction (precipitation of silicon atoms from the electrolyte [chemical reactions are presented, for example, in 14]). This etching process is carried out at a given anode current density and electrolyte composition.…”

Section: Nanostructured Layers Of Gps-var Structuresmentioning

confidence: 99%

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Nanoporous Layers and the Peculiarities of Their Local Formation on a Silicon Wafer

et al. 2022

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This review presents the results of the local formation of nanostructured porous silicon (NPSi) on the surface of silicon wafers by anodic etching using a durite intermediate ring. The morphological and crystallographic features of NPSi structures formed on n- and p-type silicon with low and relatively high resistivity have also been investigated. The proposed scheme allows one to experiment with biological objects (for example, stem cells, neurons, and other objects) in a locally formed porous structure located in close proximity to the electronic periphery of sensor devices on a silicon wafer.

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