Nanopillar transistors exhibiting single-electron quantum effects at room temperature

Abstract

A nanoelectronic device consisting of a SiNx∕Si∕SiNx nanopillar and a side electrical gate has been assembled to display single-electron resonance tunneling and Coulomb modulation at 300K. The device features an ultrasmall quantum dot of size ∼10×10×3nm3 and its manufacture is fully silicon processing compatible. We find a simple guideline to derive the gate-dot coupling strength α by comparison of the peak spacing in the current-voltage (I-V) characteristics of Id−Vd and Id−Vg at low voltage. The better-defined quantum cavity enables us to apply a three-dimensional single-particle model to identify the excited quantum states.

Interference of charge carrier in a double-dot nanopillar transistor

“…Our study proves that the vertical device is much superior to coplane system in terms of the control of disorder. 6. 7 TABLE II.…”

Vibrations and mechanically-induced currents in nanopillars transistor

“…7, when electron charging into the central Si begins at a finite voltage, periodically oscillating 'I ds appear over a very wide range of voltage, indicating a stable tunnel of single electron [7]. The spacing between peaks estimated is a 25 meV in agreement with the charging energy Ec = e 2 /2C of electron in a parallel plate capacitor C = H r H o A/H a 3.5 aF, H o = 8.85x10 -12 C 2 /Nm 2 , A = Lx W = 10 -16 nm 2 , H = 3 nm, and H r = 11.…”

Symmetry selected quantum dynamics of few electrons in nanopillar transistors

“…The nanopillar transistor as shown in Fig. 2(a) was fabricated on a p-type (100) silicon wafer which featured a central polysilicon layer separated from the top and bottom electrodes by a nitride layer 39 . This center box had a critical thickness of 3 nm and was coupled to a side gate.…”