We reports observation of giant switching currents in nanopillar transistors at 300 K. It is found that these signals represent mechanical vibration due to the interaction of charging electron and the elastic materials of silicon and silicon nitride. Specifically, when an electron is charged to penetrate the SiNx/Si/SiNx multilayer, an electrical force will be initiated to make it vibrate. In addition, such motion will couple to the electronic state in the central Si island for the optimal exchange of elastic and quantum energy. As a consequence, in some mechanical modes, these coupled vibrations will make the transistor functioning like a self-coordinated switching pump for persistent tunnel of electrical current.
² We report measurements and numerical modeling of nanopillars transistor in consisting of a multilayer SiN x /Si/SiN x structure and an electrical side gate for single-electron tunnel and Coulomb modulation at room temperature. The device has an ultrasmall quantum box of a a 10 x 10 x 10 nm 3 and its manufacture is fully VLSI processing compatible. Finite-element analysis shows that the maximum deformation is a 3Å and the corresponding elastic energy stored is a 50meV. The vibration frequency calculated is a 10 12 Hz in consistent with interference measurement. The current induced ranging from 1pA to 0.1pA is also consistent with experimental data, thus confirming that single-electron tunnel indeed can generate mechanical vibrations. 12
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