Two-dimensional (2D) materials have attracted growing attention since the discovery of graphene [1]. Transition metal dichalcogenide (TMD) semiconductors, such as MoS 2 and WS 2 , became popular materials in recent years, because they usually have intrinsic bandgaps and an indirect-to-direct bandgap transition from bulk to monolayer limit [2][3][4][5][6]. Although graphene and TMDs are promising materials in field-effect devices [7][8][9], their heterostructures are more advanced in charge-splitting functions for the applications in optoelectronic devices [10][11][12][13][14][15]. In these heterostructure devices, graphene has been utilized as an effective electrode to reduce the contact resistance in 2D semiconductor devices due to its ultra-flat surface, high carrier mobility, and gate-tunable Fermi level. The diversity of 2D semiconductors has also enabled 2D heterostructures with multiple functionalities to meet various demands in applications [16][17][18][19][20][21].Modulation of 2D heterostructure properties is desired for their diverse applications. Defect engineering of materials, which can be achieved by irradiation of particles such as electrons or ions, provides an effective way to modulate properties of materials, as proven in silicon industry. Currently, diverse irradiation sources, including argon ions (Ar + ) [22,23] [22], and an improvement in electrical conductivity after a mild oxygen treatment in MoS 2 [32]. It has been shown that upon electron irradiation, 2D TMDs can be modified with vacancy defects and doped by filling the vacancies with impurity atoms [25], and graphene is also doped with electrons or holes depending on the irradiation energy [26]. So far these effects of irradiation have been mostly investigated in single 2D materials. Effects of irradiation on 2D heterostructures have yet to be well explored, and whether the build-up of 2D heterostructures could circumvent the degradation of the materials remains a question.In this work, we found that the build-up of heterostructures could partly hinder the degradation of the properties of monolayer MoS 2 against electron irradiation damage. By insertion of a monolayer graphene between MoS 2 and the substrate, the photoluminescence (PL) from MoS 2 /graphene heterostructure area is always stronger in intensity and more robust in energy under electron irradiation, in contrast to the dramatic PL shift in the MoS 2 monolayer area. The improvement is attributed to a blocking effect of graphene that prevents MoS 2 from being affected by the substrate. Raman spectra and electrical transfer properties were also investigated to systematically reveal the effect of electron irradiation on the MoS 2 /graphene heterostructure. Our work not only deepens the understanding of irradiation effects on 2D heterostructures, but also paves the way to the design of novel irradiation-resistant devices.Electron irradiation exists commonly in environments ranging from materials observation under electron mi-