Nanoparticle photoresists from HfO2 and ZrO2 for EUV patterning

Trikeriotis, Markos; Krysaki, Marie; Chung, Yeon Sook; Ouyang, Can; Cardineau, Brian; Brainard, Robert L.; Ober, Christopher K.; Giannelis, Emmanuel P.; Cho, Kyiungyong

doi:10.2494/photopolymer.25.583

Cited by 57 publications

(42 citation statements)

References 3 publications

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“…It is also possible to tailor material properties with these nanoparticles, yielding nanocomposites. Amorphous nanoparticles of HfO2 were used for EUV patterning to develop inorganic photoresists (Trikeriotis et al 2012). Hafnia nanoparticles were embedded in a glass matrix to increase the dielectric constant (Molina et al 2012a;Molina et al 2012b).…”

Section: Introductionmentioning

confidence: 99%

Fast, microwave-assisted synthesis of monodisperse HfO2 nanoparticles

et al. 2013

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A conventional solvothermal synthesis was compared to a microwave assisted method for the synthesis of HfO2 nanoparticles. In a microwave, the reaction could be completed in three hours, compared to three days in an autoclave. In the microwave synthesis the ensemble of particles was found to have a better size dispersion and a smaller average size (4 nm). The reaction mechanism was investigated and proof for an ether elimination process was provided. Post-synthetic modification with dopamine or dodecanoic acid permitted the suspension of the synthesized particles in both polar and apolar solvents, which is an advantage for further processing.keywords: Benzyl alcohol, microwave, ligand exchange, hafnium oxide 2

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Section: Introductionmentioning

confidence: 99%

Fast, microwave-assisted synthesis of monodisperse HfO2 nanoparticles

et al. 2013

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“…LWR and LCDU of state-of-art EUV resists are still far from manufacturing requirements. On the other hand, metal containing resists have attracted a lot of attention in recent years due to superior line space patterning performance [4], high etch resistance [5] and ultrahigh sensitivity [6][7][8]. Metal oxide resists utilize a sol-gel mechanism to form condensed metal oxide network [9], while nanoparticle resists first studied by Cornell Ober group utilize ligand removal or exchange to achieve solubility switch [10].…”

Section: Introductionmentioning

confidence: 99%

Metal Sensitizer in Chemically Amplified EUV Resist: a Study of Sensitivity Enhancement and Dissolution

Jiang¹,

Simone²,

Vandenberghe³

2017

J. Photopol. Sci. Technol.

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Metal containing non-chemically amplified EUV resists have gained growing attention in recent years due to superior line space patterning performance, high etch resistance and ultrahigh sensitivity. Their favorable performance and sensitivity are believed to correlate with metals-light interactions. However, there is very few report of metal containing resists on EUV contact holes patterning. In this work, we study an alternative type metal containing resist, which utilizes conventional CAR with metal salts as sensitizer. CAR with metal sensitizer has shown enhanced sensitivity and slightly increase LCDU, yet reduced LWR is also observed in some cases. Therefore, this work is dedicated to studying the influences of metal sensitizer on resist physical properties and the underlying sensitivity enhancement mechanism.

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“…The trans-dimethyl acrylic acid (DMA) was used to replace methacrylic acid as the carboxyl ligand in the zirconium oxide/ hafnium oxide NPs. 41,42 The resulting NPs demonstrated extremely high EUV sensitivity, and achieved 20 nm patterns at a dose of 2.4 and 1.6 mJ cm −2 for HfO 2 -DMA (hafnium oxide-trans-dimethyl acrylic acid) and ZrO 2 -DMA, respectively (Figures 7b and c).…”

Section: Metal-oxide Np-based Photoresistsmentioning

confidence: 99%

“…In 2012 Trikeriotis and co-workers 41 and Trikeriotis et al 42 reported the first example of the zirconium oxide NPs based resist. Under EUV, 32 nm wide patterns with a line edge roughness of 5.9 nm and 26 nm wide patterns with a line edge roughness of 3.8 nm were obtained.…”

Section: Metal-oxide Np-based Photoresistsmentioning

confidence: 99%

In pursuit of Moore’s Law: polymer chemistry in action

Kosma

Giannelis³

et al. 2017

Polym J

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We present a focused review of photoresist strategies that have been studied over the past few decades driven by the demands of Moore's law. Selected results are discussed with emphasis on the choice of photoresist chemistry depending on the particulars of each radiation type or patterning strategy, while we present special architectures of photoresists that have attracted a great interest in the semiconductor field. We adopt an approach that allows for easy comparison between the different photoresist categories and we include brief discussions of a number of important preparation and property issues pertaining to key characteristics affecting resist performance. Polymer Journal (2018) 50, 45-55; doi:10.1038/pj.2017.64; published online 1 November 2017Photoresists are a workhorse tool for the semiconductor industry; they enable creation of small-scale structures using continuously evolving strategies to form objects of the nanoscale dimensions are needed to stay on the technology path of Moore's law. Simply put, photoresists transfer information using a light-driven process that makes them (often a polymer) either more or less soluble in the exposed region of the film. As dimensions have changed, so too have the chemistry and materials sets used in lithography. Originally requiring critical features of microns, photoresists such as cyclized polyisoprene were used. 1 Subsequently, novolac photoresists were developed and formed a water-soluble exposed material, avoiding the need for organic solvents that swelled the photoresist during development while operating at a shorter wavelength than prior resists, thus enabling smaller, more uniform features. 2 The creation of novolac resists set up a trend in photoresist design: a water developable material, working at a shorter and shorter wavelength to enable a finer feature size and adjusted composition to maintain sufficient transparency for pattern formation. This approach has carried forward through several generations of photoresists built around the principle of chemical amplification.A team of researchers with expertise in photoresists, polymersupported chemistry and protein synthesis worked at the IBM Almaden Research (San Jose, CA, USA) to tackle a new challenge in photolithography: to develop a photoresist that needed very little radiation to cause the solubility change needed during the patterning step. 3 Their concern was that the mercury light source being used to create UV radiation was increasingly weak as shorter wavelengths were used. Hence, a new process was needed that made better use of the imaging radiation.By using acid catalysis driven by a proton created in a light-induced decomposition of a photoacid generator, a single photon was shown to initiate hundreds of reactions. The resulting chemical amplification caused by that single photon was shown to overcome the limited radiation present in light sources of the time. However, the process also did something else arguably more important; it enabled a solubility change from the oil-soluble polymer ...

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Nanoparticle photoresists from HfO2 and ZrO2 for EUV patterning

Cited by 57 publications

References 3 publications

Fast, microwave-assisted synthesis of monodisperse HfO2 nanoparticles

Fast, microwave-assisted synthesis of monodisperse HfO2 nanoparticles

Metal Sensitizer in Chemically Amplified EUV Resist: a Study of Sensitivity Enhancement and Dissolution

In pursuit of Moore’s Law: polymer chemistry in action

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