Nanoparticle photoresist studies for EUV lithography

Kasahara, Kazuki; Xu, Hong; Kosma, Vasiliki; Odent, Jérémy; Giannelis, Emmanuel P.; Ober, Christopher K.

doi:10.1117/12.2258187

Cited by 26 publications

(12 citation statements)

References 1 publication

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Incorporation of NPs in hybrid photoresist materials has also been investigated with the objective to obtain high absorption centres for EUVL. 13,18 …”

Section: Introductionmentioning

confidence: 99%

EUV photofragmentation study of hybrid nonchemically amplified resists containing antimony as an absorption enhancer

et al. 2018

View full text Add to dashboard Cite

show abstract

“…Incorporation of NPs in hybrid photoresist materials has also been investigated with the objective to obtain high absorption centres for EUVL. 13,18 …”

Section: Introductionmentioning

confidence: 99%

EUV photofragmentation study of hybrid nonchemically amplified resists containing antimony as an absorption enhancer

et al. 2018

View full text Add to dashboard Cite

show abstract

“…To circumvent the challenges posed by conventional resist materials, efforts have recently begun focusing on a new class of materials, hybrid inorganic–organic clusters, composed of an inorganic metal or metal oxide core or nanoparticle capped with organic ligands. − These systems, first developed at Cornell University, possess properties that are inherently amenable to EUV patterning, such as comparatively strong EUV absorption from its inorganic core, high etch resistance, and the ability to tailor their chemistry through tunable ligand terminations. One such system that has demonstrated high sensitivity for negative-tone patterning consists of a hafnium oxide core capped with methacrylic acid (MAA) ligands (HfMAA).…”

Section: Introductionmentioning

confidence: 99%

Chemical Modification Mechanisms in Hybrid Hafnium Oxo-methacrylate Nanocluster Photoresists for Extreme Ultraviolet Patterning

et al. 2018

View full text Add to dashboard Cite

The potential implementation of extreme ultraviolet (EUV) lithography into next generation device processing is bringing urgency to identify resist materials that optimize EUV lithographic performance. Inorganic/organic hybrid nanoparticles or clusters constitute a promising new class of materials, with high EUV sensitivity from the core and tunable chemistry through the coordinating ligands. Development of a thorough mechanistic understanding of the solubility switching reactions in these materials is an essential first step toward their implementation in patterning applications but remains challenging due to the complexity of their structures, limitations in EUV sources, and lack of rigorous in situ characterization. Here we report a mechanistic investigation of the solubility switching reactions in hybrid clusters comprised of a small HfOx core capped with a methacrylic acid ligand shell (HfMAA). We show that EUV-induced reactions can be studied by performing in situ IR spectroscopy of electronirradiated films using a variable energy electron gun. Combining additional ex situ metrology, we track the chemical evolution of the material at each stage of a typical resist processing sequence. For instance, we find that a crosslinking reaction initiated by decarboxylation of the methacrylate ligands under electron irradiation constitutes the main solubility switching mechanism, although there are also chemical changes imparted by a typical the post application bake (PAB) step alone. Lastly, synchrotronbased IR microspectroscopy measurements of EUV-irradiated HfMAA films enable a comparison of reactions induced by EUV vs electron beam irradiation of the same resist material, yielding important insight into the use of electron beam irradiation as an experimental model for EUV exposure.

show abstract

“…Some researchers have reported the development of the metal containing photoresist that has high sensitivity performance, which will be very helpful for the low-energy power source to realize EUVL [21,22]. Some other new techniques including nanoparticle photoresists with high sensitivity have been reported [23][24][25][26]. Lately at the 2016 SPIE Advanced Lithography conference, a good amount of papers was presented demonstrating the substantial research on Photosensitized CARs [27][28][29][30][31].…”

Section: Status and Challengesmentioning

confidence: 99%

Promising Lithography Techniques for Next-Generation Logic Devices

2018

View full text Add to dashboard Cite

Continuous rapid shrinking of feature size made the authorities to seek alternative patterning methods as the conventional photolithography comes with its intrinsic resolution limit. In this regard, some promising techniques have been proposed as next-generation lithography (NGL) that has the potentials to achieve both high-volume production and very high resolution. This article reviews the promising NGL techniques and introduces the challenges and a perspective on future directions of the NGL techniques. Extreme ultraviolet lithography (EUVL) is considered as the main candidate for sub-10-nm manufacturing, and it could potentially meet the current requirements of the industry. Remarkable progress in EUVL has been made and the tools will be available for commercial operation soon. Maskless lithography techniques are used for patterning in R&D, mask/mold fabrication and low-volume chip design. Directed self-assembly has already been realized in laboratory and further effort will be needed to make it as NGL solution. Nanoimprint lithography has emerged attractively due to its simple process steps, high throughput, high resolution and low cost and become one of the commercial platforms for nanofabrication. However, a number of challenging issues are waiting ahead, and further technological progresses are required to make the techniques significant and reliable to meet the current demand. Finally, a comparative study is presented among these techniques.

show abstract

Nanoparticle photoresist studies for EUV lithography

Cited by 26 publications

References 1 publication

EUV photofragmentation study of hybrid nonchemically amplified resists containing antimony as an absorption enhancer

EUV photofragmentation study of hybrid nonchemically amplified resists containing antimony as an absorption enhancer

Chemical Modification Mechanisms in Hybrid Hafnium Oxo-methacrylate Nanocluster Photoresists for Extreme Ultraviolet Patterning

Promising Lithography Techniques for Next-Generation Logic Devices

Contact Info

Product

Resources

About