EUV photofragmentation study of hybrid nonchemically amplified resists containing antimony as an absorption enhancer

Abstract

Understanding the EUV photofragmentation mechanism in a highly sensitive hybrid n-CAR containing SbF6− as an absorption enhancer.

Understanding the Factors Determining the Faradaic Efficiency and Rate of the Lithium Redox-Mediated N2 Reduction to Ammonia

“…X-ray photoelectron spectroscopic (XPS) analysis of the electrodes exposed to air after 12 h of electroreduction and resting at an open circuit for 2.5 h until E oc reached ∼2.8 V vs Li app 0/+ showed no presence of Li 0 /Li 3 N, as expected (Figure S10a) but revealed a significant amount of Li 2 CO 3 21 (Figure S10b-d), which is most likely a product of reaction of Li 2 O/ LiOH with air CO 2 , as well as the original triflate salt (Figure S10e). 22 Additionally, Li 2 SO 3 (Figure S10f) 23 and small amounts of LiF (Figure S10e) 24 were found, both being likely products of the reductive decomposition of the OTf − anion. 20,22,25 XPS analysis of the electrode that was withdrawn from the cell as fast as possible after a 12 h test, with no subsequent measurements/resting and no exposure to air, revealed a qualitatively very similar composition except for the presence of LiOH instead of carbonate (Figure S10).…”

Polarization Dependence in the Carbon K-Edge Photofragmentation of MAPDST Photoresist: An Experimental and Theoretical Study

“…The results presented here are very interesting taking into account our very recent work carried out using EUV excitation at 103.5 eV. 40,41 Absorption of EUV photons is a not resonant process, and a high stability of the aromatic section of the resists was found in spite of the studied resists containing heavy metal atoms to enhance the absorption of EUV photons. In particular, in the EUV irradiation of a polyarylene-sulfonium resist (PAS), 41 the aromatic sections of the polymer remained almost intact even after 15 min of continuous irradiation at 103.5 eV.…”

“…Irradiation by SR and surface oxidation of the thin resist surfaces followed the methodology already described. − , Briefly, specific transitions were selected, and for a fixed period of time, the polymer was irradiated under UHV conditions. After irradiation, the samples were transferred to a preparation chamber where they were exposed to pure oxygen at a pressure of 10 –3 Pa for 30 min to neutralize and oxidize the remaining radicals on the film surfaces.…”

“…In recent years, we have studied the photochemistry and oxidation mechanisms of several resists to be used in extreme ultraviolet lithography (EUVL) for the next generation of integrated circuits. − Those investigations were an attempt to understand the complex photofragmentation mechanisms after extreme ultraviolet (EUV) or inner shell excitation using SR. In one of our studies, a selective bond dissociation process was observed when the excitation energy was tuned to the C 1s → π CC * transition (285.3 eV) .…”

Synergistic contribution on flame retardancy by charring production in high‐performance PEI/PBT/PTFE ternary blends: The role of PTFE

“…The presence of Sb‐F species is further confirmed by Sb 3d and Sb 4d spectra analysis (Figures S4 and S5). In 3d region, SbF 3 is confirmed at 531.7 (3d 5/2 ) and 541.0 eV (3d 3/2 ), while in 4d region the peaks at 35.8 (3d 5/2 ) and 37.0 eV (3d 3/2 ) are assigned to Sb‐F species 63 …”