Nanometer-thin pure boron CVD layers as material barrier to Au or Cu metallization of Si

Abstract

Metallization layers of aluminum, gold, or copper are shown to be protected from interactions with silicon substrates by thin boron layers grown by chemical-vapor deposition (CVD) at 450 °C. A 3-nm-thick B-layer was studied in detail. It formed the p+-anode region of PureB diodes that have a metallurgic junction depth of zero on n-type Si. The metals were deposited by electron-beam-assisted physical vapor deposition (EBPVD) at room temperature and annealed at temperatures up to 500 °C. In all cases, the B-layer was an effective material barrier between the metal and Si, as verified by practically unchanged PureB diode I–V characteristics and microscopy inspections of the deposited layers. For this result, it was required that the Si surface be clean before B-deposition. Any Si surface contamination was otherwise seen to impede a complete B-coverage giving, sometimes Schottky-like, current increases. For Au, room-temperature interactions with the Si through such pinholes in the B-layer were excessive after the 500 °C anneal.

Application and Safety Performance of Nanomaterials in Clothing Design Engineering

“…e photocatalytic properties of nano-TiO 2 are determined by the energy band structure [12]. e energy band structure describes the forbidden or allowed energy carried by electrons, which is caused by the quantum dynamic electron wave diffraction in the periodic lattice.…”

Innovative Artistic Design of Nanomaterial Products Based on Intelligent Algorithm

“…Metals are deposited by electron beam-assisted physical vapor deposition at room temperature and annealed at temperatures up to 500 °C. It was verified by the nearly constant I-V characteristics of the PureB diodes and the microscopic examination of the deposited layers [2].…”

Repair Effect of Nanomaterials on Meniscus Injury Induced by Calisthenics Exercise

“…Shivakumar et al verified by nearly unchanged PureB diode I-V characteristics and microscopic examination of the deposited layers. In order to obtain this result, it is required that the silicon surface must be cleaned before B deposition [2]. Here, Hu et al introduced a new method based on two-dimensional electron resonance and thermal displacement measurements to measure the two-dimensional energy loss temperature of a sample by combining these measurements with first-principle modeling [3].…”