Nanometer resolution in luminescence microscopy of III-V heterostructures

Abstract

In a scanning tunneling microscope experiment, the luminescence induced by the recombination of holes with electrons tunneling into cleaved (110) GaAs/AlGaAs heterostructures is used to image the interface region with nanometer resolution.

Novel Conductive and Transparent Optical Fiber Probe for Multifunctional Scanning Tunneling Microscopy

“…The corresponding maximum quantum efficiencies (the number of emitted photons per an electron) at 295 and 80 K are ~1.8 ×10 4 and ~1.5 ×10 3 photons/electron, respectively. The quantum efficiency value (~1.8 ×10 4 ) at 295 K shows a good agreement with the previously reported value (~1 × 10 4 photons/electron) of STML from p-type GaAs regions of cleaved (110) GaAs/Al-GaAs heterostructures at RT (Abraham et al, 1990). Therefore, the total detection efficiency (about 0.15%) of the single photon counting system is estimated quite reasonably.…”

Luminescence experiments on supported molecules with the scanning tunneling microscope

“…4(b), or ellipsoidal reflectors, see Fig. 4(c), have been employed close to the tunnel junction to focus the emitted light to a detector or to an optical fiber outside the vacuum chamber [90][91][92][93]30,94]. In this way a collection angle of Ω ≈ 1 sr has been achieved for a condenser lens with a low fnumber [92], while for an ellipsoidal reflector a value of Ω ≈ 3 sr has been reported [92].…”

Spatially resolved spectroscopy on single self-assembled quantum dots

“…Cathodoluminescence and STM-induced luminescence (STML) have been shown in the past to be powerful tools, suitable to reach the limit of single dot spectroscopy. 4,[7][8][9][10][11] A partly complementary technique is near field spectroscopy. In addition to high spatial resolution, also the possibility for resonant optical excitation is available here.…”