In a scanning tunneling microscope experiment, the luminescence induced by the recombination of holes with electrons tunneling into cleaved (110) GaAs/AlGaAs heterostructures is used to image the interface region with nanometer resolution.
The domain structure of a simple bariumferrite and a sintered Nd-Fe-B magnet was analysed by means of three-dimensional neutron depolarisation between 10 K and room temperature. The temperature dependence of the mean domain size was derived from the measured depolarization matrix both for isotropic and anisotropic specimens
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