2016
DOI: 10.1103/physrevb.93.161414
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Nanomechanical detection of the spin Hall effect

Abstract: The spin Hall effect creates a spin current in response to a charge current in a material that has strong spin-orbit coupling. The size of the spin Hall effect in many materials is disputed, requiring independent measurements of the effect. We develop a novel mechanical method to measure the size of the spin Hall effect, relying on the equivalence between spin and angular momentum. The spin current carries angular momentum, so the flow of angular momentum will result in a mechanical torque on the material. We … Show more

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Cited by 5 publications
(5 citation statements)
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“…Micro-and Nano-Electro-Mechanical Systems (MEMS and NEMS) resonators are of fundamental and technological interest, with applications ranging from timing in integrated circuits [1] to methods in quantum metrology [2,3], while operating in their linear regimes. At high drive amplitudes, these resonators exhibit nonlinear behavior, useful for studying fundamental effects such as stochastic resonance [4], parametric amplification and frequency entrainment [5], and logic operation [6].…”
Section: Introductionmentioning
confidence: 99%
“…Micro-and Nano-Electro-Mechanical Systems (MEMS and NEMS) resonators are of fundamental and technological interest, with applications ranging from timing in integrated circuits [1] to methods in quantum metrology [2,3], while operating in their linear regimes. At high drive amplitudes, these resonators exhibit nonlinear behavior, useful for studying fundamental effects such as stochastic resonance [4], parametric amplification and frequency entrainment [5], and logic operation [6].…”
Section: Introductionmentioning
confidence: 99%
“…These magnetic semiconductors could lead to unite the electrical manipulation of magnetic states and the magnetic adjustment of electrical signals that could result in devices such as bipolar transistors, spin resonant diodes, spin field effect transistors, magnetic semiconductor tunnel junction devices, magnetic bipolar junction diodes, and transistors, etc. [2][3][4][5][6][7][8]. If carrier-mediated magnetization can be induced in transparent semiconducting oxides such as In 2 O 3 , ZnO, TiO 2 , etc., it is predicted that such DMOS will exhibit coupling among electrical, optical, and magnetic properties, further boosting the prospects of devices emanating from such materials.…”
Section: Introductionmentioning
confidence: 99%
“…A cantilever is a long rigid plate of which one end is supported tightly but the other end can mount a load. Because of their high sensitivity [11,12], cheapness, and ease of fabrication in large areas, cantilever structures have been essential in spin mechanics [1,[5][6][7][8][9][10].…”
mentioning
confidence: 99%