2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC) 2013
DOI: 10.1109/essderc.2013.6818872
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Nanomagnetic logic clocked in the MHz regime

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Cited by 21 publications
(13 citation statements)
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“…ing behavior is described by a probability density function (PDF) [15,18]. As described in section 2, the coupling fields of the input magnets superpose with the field pulse and therefore shift the PDF up or down.…”
Section: Methodsmentioning
confidence: 99%
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“…ing behavior is described by a probability density function (PDF) [15,18]. As described in section 2, the coupling fields of the input magnets superpose with the field pulse and therefore shift the PDF up or down.…”
Section: Methodsmentioning
confidence: 99%
“…Due to switching field distributions (SFDs) caused by the influence of thermal noise and fabrication variations of the ANC from dot to dot, the residual clocking window for complex NML circuits is noticeably reduced [15,[18][19][20]. Hence, it is fundamental to precisely control the location and the strength of the ANC by size and dose of the partial FIB irradiation [5,9].…”
Section: Theory Of Perpendicular Nmlmentioning
confidence: 99%
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“…6,7 Information processing is clocked by an alternating, pulsed magnetic field, which is generated by on-chip coils. 3,7,8 Digital data processing by superposing coupling fields between interacting magnets favor majority gate-based logic and are furthermore highly suitable for the implementation of 3D-integrated circuits. 2,9 Recently, a 3D-integrated majority gate has been experimentally demonstrated, indicating the potential of 3D pNML.…”
mentioning
confidence: 99%
“…The switching process is based on domain wall (DW) nucleation in the weakest spot followed by DW propagation through the entire magnet [3]. The switching energy is provided by an alternating perpendicular magnetic clocking field [4]. Controlled DW nucleation is ensured by creating an artificial nucleation center (ANC) with local focused ion beam (FIB) irradiation [3,5], which however causes large fabrication variations, requires an additional process step and is difficult to implement on wafer processes [6,7].…”
Section: Introductionmentioning
confidence: 99%