Nanolithography with a high-resolution STEM

Organic imaging materials: a view of the future

“…Studies using extremely fine (2 nm) electron beam exposures have shown that the ultimate resolution of the t-BOC resist system is about 40 nm when processed in positive tone. 15,16 Other studies have shown that line-width spread by catalyst migration is somewhat self-limiting. 17,18 The reported self-limiting nature of linewidth spread has led to debate about the actual mechanisms responsible for acid diffusion/transport in chemical amplified resist systems.…”

“…As mentioned previously, the apparent resolution limit for the classical chemically amplified tBOC resist system was determined to be about 40 nm. 15 Printing a 50 nm feature in this material would be a difficult task for any NGL if there is already 40 nm of intrinsic resist bias. Ways to improve resist resolution by limiting catalyst migration are under investigation, but to maintain chemical amplification the catalyst must maintain some amount of mobility, and any amount of catalyst mobility will lead to some loss of resolution.…”

Photoacid generation in polymeric films.

“…Recent, high resolution e-beam work, has provided experimental support for a limited acid diffusion range. A 50 kV, 4A electron beam system, and thin membrane substrates were used to resolve 1SOA features in the acid-catalyzed poly(4-t-butyloxycarbonlyoxystyrene) resist system [22].…”

Sub-50nm half-pitch imaging with a low activation energy chemically amplified photoresist

“…1 This intrinsic feature is a consequence of the two-step mechanism that occurs in these systems. 1 This intrinsic feature is a consequence of the two-step mechanism that occurs in these systems.…”