Nanolithography Using Fullerene Films as an Electron Beam Resist

Abstract

Electron beam (e-beam) irradiation has been found to reduce the dissolution rate of evaporated C60 films in organic solvents such as monochlorobenzene, which shows that this material acts as a negative e-beam resist with a sensitivity of 1×10-2 C/cm2. It has higher dry-etch durability than conventional novolac resists. Its applicability to nanofabrication has been demonstrated by fabricating Si pillars of 20–30 nm diameter using electron cyclotron resonance microwave plasma etching and dot patterns defined in the C60 film as etching masks.

1,3,5-Tris(4-(tert-Butoxycarbonylmethoxy)-phenyl)benzene as a Novel Electron-beam Positive Resist for Nanometer Lithography.

“…However, low-molecular-weight organic compounds generally do not form uniform stable amorphous films, since they tend to crystallize readily. Very recently, an oligomer, a calixarene derivative [2], and a vacuum evaporated film of C60 [3] have been reported to function as negative electron-beam resists with high resolution.We report here a novel low-molecular-weight organic compound, 1,3,5-tris[4-(tert-butoxycarbonylmethoxy)phenyl]benzene(BCMTPB), which functions as a positive-type electron-beam resist material. The new compound BCMTPB was synthesized by the condensation reaction of 1,3,5-tris(4-hydroxyphenyl)benzene with chloroacetic acid tert-butyl ester and identified by various spectroscopies, mass spectrometry and elemental analysis.…”

“…However, low-molecular-weight organic compounds generally do not form uniform stable amorphous films, since they tend to crystallize readily. Very recently, an oligomer, a calixarene derivative [2], and a vacuum evaporated film of C60 [3] have been reported to function as negative electron-beam resists with high resolution.…”

C60-Incorporated Nanocomposite Resist System.

“…C6o has several advantages for incorporation in a nanocomposite system, which will provide a great potential to enhance resist performance. First, it is highly etching resistant as demonstrated by Tada et al [3] Second, it readily dissolves in aromatic solvents, but not in nonaromatic ones. Third, it is chemically and physical stable.…”

Multicomponent negative-type photoresist based on Noria analog with 12 ethoxy groups

“…8,9 Thereafter, many negative-or positive-type molecular resist materials have been reported using various molecular glasses. [10][11][12][13][14] More than 10 years ago, C-4-hydoroxyphenylcalix [4]resorcinarene derivatives containing tert-butyl groups (CRA ph -COO t Bu) were investigated as positive-type alkaline developable molecular resists. However, a half-pitch (hp) resolution pattern of o100 nm was not achieved because CRAph derivatives do not have as much mechanical strength as a positive-type molecular resist under lithographic process conditions.…”