Nanoimprint lithography patterned GaAs templates for site-controlled InAs quantum dots

Tommila, J.; Tukiainen, Antti; Viheriälä, Jukka; Schramm, Andreas; Hakkarainen, Teemu; Aho, Arto; Stenberg, Pauline; Dumitrescu, M.; Guina, Mircea

doi:10.1016/j.jcrysgro.2010.11.165

Cited by 37 publications

(25 citation statements)

References 21 publications

(20 reference statements)

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“…Further approaches for an optimized QD growth are based on the controlled nucleation of semiconductor material at predefined positions—referred as site‐controlled QD (SCQD) growth. Here, the sample surface is usually pre‐patterned, for example, via lithography and a following etching step or nanoimprint lithography to form circular or pyramidal pits that serve as a nucleation spot for the QD material. Compared to the random growth of self‐assembled QDs, this technique offers the controlled positioning and formation on the sample surface with a predefined QD density.…”

Section: Quantum Dots As Nonclassical Light Sourcesmentioning

confidence: 99%

Semiconductor Quantum Dots for Integrated Quantum Photonics

et al. 2019

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Quantum mechanics promises to have a strong impact on many aspects of research and technology, improving classical analogues via purely quantum effects. A large variety of tasks are currently under investigation, for example, the implementation of quantum computing, sensing, metrology, and communication. From a general perspective, in a similar way as classical computing benefited by the reduction of the device footprint, enabling the realization of highly complex chips, a range of quantum applications will sensibly improve thanks to the successful realization of on-chip quantum photonics. Conversely to bulky table-top experiments, it would be very advantageous to transfer all required functionalities on the same quantum photonic chip. The key elements for quantum photonic circuits are on-demand nonclassical light sources, a versatile photonic logic, the ability to store quantum information, and highly efficient detectors, directly integrated on-chip. Among several systems capable of the efficient generation of singleand indistinguishable photons, quantum dots are rapidly establishing as one of the most appealing candidates. This paper reviews the recent progress in the on-chip integration of quantum-dot-based nonclassical light sources as well as in the development of the main building blocks, either integrated monolithically or hybridly on a compact and scalable platform. IntroductionFrom the foundation of quantum mechanics in the early 20th century to explain fundamental physical observations, over the development of transistors and lasers in the 1950s and 1960s, the second quantum revolution is now in full swing. The driving force behind this continuing "quantum footrace" are quantum mechanical effects based on superposition and entanglement that can lead to profound changes. Especially in the field of quantum information science, dramatic improvements are expected in terms of increased computational speed and communication security if compared with classical counterparts.Talking about quantum supremacy, two problems-Grover's algorithm for the efficient search in large unsorted databases and Shor's algorithm for the prime factorization of large integers-are frequently mentioned. [1][2][3] Grover's quantum search algorithm can find an element of a search space M in O( √ M) operations compared to the best known classical algorithms approximately requiring O(M) steps. [4] Shor's algorithm can prime factorize large integers with N bits in polynomial speed compared to the exponential scaling of classical algorithms. Currently, several cryptography schemes in electronic communication systems rely on the difficulty of prime factorization as its security method. Consequently, a quantum computer could break the cryptographic keys quickly by calculating or searching exhaustively all key possibilities, which may allow an eavesdropper to intercept the communication channel. [5] However, quantum key distribution schemes can be alternatively used, which are based on the secure exchange of a cryptographic key between remote...

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Section: Quantum Dots As Nonclassical Light Sourcesmentioning

confidence: 99%

Semiconductor Quantum Dots for Integrated Quantum Photonics

et al. 2019

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“…Another problem associated with S-K and droplet epitaxy arises from the random nucleation positions of the QDs, which limits the feasibility of integration with other photonic elements. This obstacle has been tackled by modifying the growth surface chemical potential, either by using a dielectric mask with apertures [12], [13], by ex-or in-situ etching of nano-cavities [14], [15], or by inducing local strain [16] thereby defining a preferential nucleation point. For example, a small inhomogeneous broadening (14.4 meV) and narrow lines (> 43 μeV) of QDs were achieved by employing SK growth of InGaAs/GaAs QDs in circular nano-recesses on (100) GaAs substrates [17], and more recently linewidths as low as 6 µeV were obtained by SK growth of InAs QDs on a thick GaAs buffer layer grown on a patterned substrate [18].…”

Section: Introductionmentioning

confidence: 99%

Emission wavelength control of ordered arrays of InGaAs/GaAs quantum dots

Kulkova¹,

Lyasota²,

Jarlov³

et al. 2017

Journal of Crystal Growth

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Growth of InGaAs/GaAs quantum dots (QDs) in inverted pyramids on pre-patterned {111}B GaAs substrates is a versatile technique allowing for precise site and emission energy control. We report on the fabrication of QDs with a wavelength setting within a range of ~100 meV achieved in a single growth step by varying the pyramid size and without compromising the optical quality. Low-temperature micro-photoluminescence spectra of the QD ensembles exhibit low inhomogeneous broadening (~15 meV) and excitonic linewidths as low as 50 μeV. Moreover, we demonstrate the selective energy tuning of a single QD embedded within an ensemble of QDs spectrally blue-shifted by as much as 40 meV, which is of interest for single QD spectroscopy and the fabrication of integrated multi-wavelength single photon sources.

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“…To this end, UV-nanoimprint lithography (UV-NIL) is a high resolution, large scale patterning technique, which has been shown to be suitable for the fabrication of SCQDs. 10 For example, the fabrication of large arrays of SCQDs with tunable properties and high optical quality using a combination of UV-NIL and molecular beam epitaxy (MBE) has been reported. [11][12][13][14][15] However, for practical applications, it is important to obtain high collection efficiency of the emission from/to the QD.…”

mentioning

confidence: 99%

“…The patterning and chemical cleaning processes are described in more detail elsewhere. 10 A 30 nm GaAs buffer layer and 1.8 ML of InAs were deposited at 470 C and 540 C, respectively, on top of the pattern followed by the upper half of the cavity. After the growth of the top DBR, focused ion beam induced deposition of Platinum was utilized to form an etch mask for fabricating the micropillars.…”

mentioning

confidence: 99%

Cavity-enhanced single photon emission from site-controlled In(Ga)As quantum dots fabricated using nanoimprint lithography

Tommila

Belykh

Hakkarainen

et al. 2014

Applied Physics Letters

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Articles you may be interested inImpact of the non-planar morphology of pre-patterned substrates on the structural and electronic properties of embedded site-controlled InAs quantum dots Structural and optical properties of InAs quantum dot chains grown on nanoimprint lithography structured GaAs with different pattern orientations Appl. Phys. Lett. 97, 173107 (2010); 10.1063/1.3506903 Molecular-beam epitaxy growth of site-controlled InAs/GaAs quantum dots defined by soft photocurable nanoimprint lithography High optical quality InAs site-controlled quantum dots grown on soft photocurable nanoimprint lithography patterned GaAs substrates Appl. Phys. Lett. 95, 173108 (2009); 10.1063/1.3255015Fabrication of InAs quantum dots in Al As ∕ Ga As DBR pillar microcavities for single photon sources

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Nanoimprint lithography patterned GaAs templates for site-controlled InAs quantum dots

Cited by 37 publications

References 21 publications

Semiconductor Quantum Dots for Integrated Quantum Photonics

Semiconductor Quantum Dots for Integrated Quantum Photonics

Emission wavelength control of ordered arrays of InGaAs/GaAs quantum dots

Cavity-enhanced single photon emission from site-controlled In(Ga)As quantum dots fabricated using nanoimprint lithography

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