NanoElectronics roadmap for Europe: From nanodevices and innovative materials to system integration

Ahopelto, Jouni; Ardila, Gustavo; Baldi, L.; Belot, Didier; Fagas, Giorgos; Gendt, Stefan De; Demarchi, Danilo; Fernández-Bolaños, Montserrat; Holden, D. G.; Ionescu, A.; Meneghesso, Gaudenzio; Mocuta, A.; Pfeffer, Markus; Popp, R.; Sangiorgi, Enrico; Torres, C. M. Sotomayor

doi:10.1016/j.sse.2019.03.014

Cited by 21 publications

(14 citation statements)

References 25 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…Introduction -There is broad interest in using the spin degree of freedom for information transport. This makes the efficient manipulation of spin currents an important but also challenging task [1][2][3][4]. Magnons, the quantized excitations of the spin system in a magnetically ordered material, are one of the most promising candidates for the transport of spin information.…”

mentioning

confidence: 99%

Spin Transport in a Magnetic Insulator with Zero Effective Damping

et al. 2019

View full text Add to dashboard Cite

Applications based on spin currents strongly profit from the control and reduction of their effective damping and their transport properties. We here experimentally observe magnon mediated transport of spin (angular) momentum through a 13.4 nm thin yttrium iron garnet film with full control of the magnetic damping via spin-orbit torque. Above a critical spin-orbit torque, the fully compensated damping manifests itself as an increase of magnon conductivity by almost two orders of magnitude. We compare our results to theoretical expectations based on recently predicted current induced magnon condensates and discuss other possible origins of the observed critical behaviour. arXiv:1812.01334v3 [cond-mat.mtrl-sci]

show abstract

mentioning

confidence: 99%

Spin Transport in a Magnetic Insulator with Zero Effective Damping

et al. 2019

View full text Add to dashboard Cite

show abstract

“…These solutions may be successful in the industry in 15 years, when the price/quality ratio of carbon-related technologies will equal the excellent reproducibility and price of the MOS-FET transistors. Therefore, the nanoelectronics roadmap still emphasizes that biosensors with MOS transducers will be the first beneficiaries of the cointegration between the MOS part and enzymatic receptor [ 10 ].…”

Section: Introductionmentioning

confidence: 99%

Optimized Technologies for Cointegration of MOS Transistor and Glucose Oxidase Enzyme on a Si-Wafer

et al. 2021

View full text Add to dashboard Cite

The biosensors that work with field effect transistors as transducers and enzymes as bio-receptors are called ENFET devices. In the actual paper, a traditional MOS-FET transistor is cointegrated with a glucose oxidase enzyme, offering a glucose biosensor. The manufacturing process of the proposed ENFET is optimized in the second iteration. Above the MOS gate oxide, the enzymatic bioreceptor as the glucose oxidase is entrapped onto the nano-structured TiO2 compound. This paper proposes multiple details for cointegration between MOS devices with enzymatic biosensors. The Ti conversion into a nanostructured layer occurs by anodization. Two cross-linkers are experimentally studied for a better enzyme immobilization. The final part of the paper combines experimental data with analytical models and extracts the calibration curve of this ENFET transistor, prescribing at the same time a design methodology.

show abstract

“…В связи с ростом степени интеграции все более и более высокие требования предъявляются к параметрам управляющих МОП транзисторов [1], которые напрямую зависят от электрофизических свойств оксида затвора [2]. Электрическая прочность диэлектрика, его сопротивление, а также воздействие зарядовых кулоновских центров в системе Si-SiO2 на эксплуатационные параметры МОП-транзисторов является определяющим при увеличении степени интеграции [2,3].…”

Section: Introductionunclassified

Formation of a gate dielectric of nanometer thickness by rapid thermal treatment

Kovalchuk

Omelchenko

Пилипенко

et al. 2021

Doklady Belorusskogo gosudarstvennogo universiteta informatiki

View full text Add to dashboard Cite

Investigations of the thickness and optical characteristics of thin SiO2 films obtained by one-, two-, or three-stage rapid thermal processing (RTP) at atmospheric pressure, pulses of 6, 12, and 20 s duration have been carried out. To obtain thin SiO2 films by the RTP method, N-type:Ph 4.5 Оhm/□ (100) silicon wafers were used as initial samples. The samples were preliminarily oxidized at 1000 °C of the obtained wet oxygen (SiO2 d = 100 nm), then the silicon oxide was completely removed in a solution of hydrofluoric acid, after which the wafers were subjected to chemical cleaning using the Radio Corporation of America (RCA) technology. Oxidation in a stationary oxygen atmosphere was carried out in one or two stages by heating the plates with a light pulse of different power up to maximum temperatures of 1035 – 1250 °C, as well as a three-stage process, where the final stage was annealing in a nitrogen atmosphere or in a forming gas (N2 97% + H2 3%). The characteristics of SiO2-Si barrier structures nitrided in N2, obtained by the RTP process by light fluxes with pulses of a second duration, were studied to improve the electrophysical parameters of gate oxides by the RTP method. It is of interest for integrated circuits (ICS) with a high density of the active regions of devices.

show abstract

NanoElectronics roadmap for Europe: From nanodevices and innovative materials to system integration

Cited by 21 publications

References 25 publications

Spin Transport in a Magnetic Insulator with Zero Effective Damping

Spin Transport in a Magnetic Insulator with Zero Effective Damping

Optimized Technologies for Cointegration of MOS Transistor and Glucose Oxidase Enzyme on a Si-Wafer

Formation of a gate dielectric of nanometer thickness by rapid thermal treatment

Contact Info

Product

Resources

About