Nanoelectronic devices with reactively fabricated semiconductor

Kim, Jooho; Akinaga, H.; Atoda, Nobufumi; Tominaga, Junji

doi:10.1063/1.1470711

Cited by 6 publications

(2 citation statements)

References 16 publications

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“…In this design, the superlattice film was deposited onto a flat and cleaned (dry-etched) Si wafer, and successively a sequence of ZnS-SiO 2 , ferromagnetic TbFeCo, and ZnS-SiO 2 layers, 10 nm thick each, were deposited. By exposure to a focused laser pulse ( λ = 405 nm), the ZnS-SiO 2 /TbFeCo/ZnS-SiO 2 layers inter-diffused, resulting in the formation of an electrical contact pillar [ 23 ] with a diameter of about 400 nm directly connected to both the ferroelectric layer and the phase-change film. Finally, a TiN electrode was deposited on top.…”

Section: Methodsmentioning

confidence: 99%

Giant multiferroic effects in topological GeTe-Sb₂Te₃superlattices

Tominaga

Kolobov

Fons

et al. 2015

Science and Technology of Advanced Materials

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Multiferroics, materials in which both magnetic and electric fields can induce each other, resulting in a magnetoelectric response, have been attracting increasing attention, although the induced magnetic susceptibility and dielectric constant are usually small and have typically been reported for low temperatures. The magnetoelectric response usually depends on d-electrons of transition metals. Here we report that in [(GeTe)2(Sb2Te3)l]m superlattice films (where l and m are integers) with topological phase transition, strong magnetoelectric response may be induced at temperatures above room temperature when the external fields are applied normal to the film surface. By ab initio computer simulations, it is revealed that the multiferroic properties are induced due to the breaking of spatial inversion symmetry when the p-electrons of Ge atoms change their bonding geometry from octahedral to tetrahedral. Finally, we demonstrate the existence in such structures of spin memory, which paves the way for a future hybrid device combining nonvolatile phase-change memory and magnetic spin memory.

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Section: Methodsmentioning

confidence: 99%

Giant multiferroic effects in topological GeTe-Sb₂Te₃superlattices

Tominaga

Kolobov

Fons

et al. 2015

Science and Technology of Advanced Materials

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“…We have reported recently 10,11) that the reaction of the RE-TM (TbFeCo) sandwiched between ZnS-SiO 2 dielectric layers reveals anomalous transmittance change with temperature increase, as shown in Fig. 2.…”

Section: Resultsmentioning

confidence: 85%

Fabrication of Carbon Nanotubes by Slot-Excited Microwave Plasma-Enhanced Chemical Vapor Deposition

Shim¹,

Kojima

Kono³

et al. 2008

jjap

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Using a variety of recording materials, such as terbium-iron-cobalt (TbFeCo), tungsten (W), silver (Ag) and silver-zinc (Ag-Zn), the characteristics of super-resolution near-field structure (super-RENS) disks with the reactive diffusion (RD) recording mechanism were investigated. As a new mask material, WO x , which has a high transition temperature, was applied to a super-RENS disk. A combined W recording layer and WO x mask layer achieved much higher carrier-to-noise ratio (CNR), and better thermal stability, compared with AgO x light-scattering-type super-RENS disks.

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Highly THz frequency carrier generated by light for multipurpose RFID applications

Pornsuwancharoen

Tasakorn

Yupapin

et al. 2013

Optik

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Nanoelectronic devices with reactively fabricated semiconductor

Abstract: Articles you may be interested inThe effect of thermal treatment induced inter-diffusion at the interfaces on the charge trapping performance of HfO2/Al2O3 nanolaminate-based memory devices

Cited by 6 publications

References 16 publications

Giant multiferroic effects in topological GeTe-Sb₂Te₃superlattices

Giant multiferroic effects in topological GeTe-Sb₂Te₃superlattices

Fabrication of Carbon Nanotubes by Slot-Excited Microwave Plasma-Enhanced Chemical Vapor Deposition

Highly THz frequency carrier generated by light for multipurpose RFID applications

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Nanoelectronic devices with reactively fabricated semiconductor

Abstract: Articles you may be interested inThe effect of thermal treatment induced inter-diffusion at the interfaces on the charge trapping performance of HfO2/Al2O3 nanolaminate-based memory devices

Cited by 6 publications

References 16 publications

Giant multiferroic effects in topological GeTe-Sb2Te3superlattices

Giant multiferroic effects in topological GeTe-Sb2Te3superlattices

Fabrication of Carbon Nanotubes by Slot-Excited Microwave Plasma-Enhanced Chemical Vapor Deposition

Highly THz frequency carrier generated by light for multipurpose RFID applications

Contact Info

Product

Resources

About

Giant multiferroic effects in topological GeTe-Sb₂Te₃superlattices

Giant multiferroic effects in topological GeTe-Sb₂Te₃superlattices