2016
DOI: 10.1155/2016/7920238
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Nanocrystals Growth Control during Laser Annealing of Sn:(α-Si) Composites

Abstract: An efficient technique for low temperature metal-induced nanocrystalline silicon fabrication is presented. The technique is based on laser annealing of thin films of “amorphous silicon-tin” composites combined with in situ control and monitoring with Raman technique. Laser annealing was shown to provide the possibility of fine-tuning the nanocrystals size and concentration, which is important in photovoltaic and thermoelectric devices fabrication.

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Cited by 10 publications
(25 citation statements)
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References 38 publications
(67 reference statements)
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“…A larger dispersion of the Х С values (in comparison with distribution of nanocrystal sizes) is due to a greater statistical error in the calculation of this parameter. These results confirm the conclusions of recent work [23] about the irradiation intensity effect on the crystal size and concentration under MIC in SiSn-Si structures being influenced by continuous laser radiation. As can be seen from Fig.…”
Section: Resultssupporting
confidence: 92%
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“…A larger dispersion of the Х С values (in comparison with distribution of nanocrystal sizes) is due to a greater statistical error in the calculation of this parameter. These results confirm the conclusions of recent work [23] about the irradiation intensity effect on the crystal size and concentration under MIC in SiSn-Si structures being influenced by continuous laser radiation. As can be seen from Fig.…”
Section: Resultssupporting
confidence: 92%
“…After certain modes of laser treatments, there additionally appears the narrow band with a maximum within the range 500…520 сm -1 (b), which corresponds to the nanocrystalline phase of silicon [24,25]. This is the result of a MIC of amorphous silicon under the influence of laser irradiation [23]. Initial spectra of the simples Nos 1 to 6-2 contain both bands.…”
Section: Resultsmentioning
confidence: 99%
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“…In work [23], it was shown that the process of tin-induced crystallization of amorphous silicon can be stimulated by laser irradiation. This fact allows the Raman scattering to be used in order to measure the temperature, size of nanocrystals, and volume occupied by them in the course of their formation.…”
Section: Introductionmentioning
confidence: 99%