Nanocrystalline Silicon Embedded in SiO Films by RF Magnetron Sputtering

Abstract

SiO films were deposited by RF magnetron sputtering using a SiO target at various substrate temperatures. The film obtained at a substrate temperature below 600 °C was amorphous, while that at 700 °C included nanocrystalline silicon particles (3–5 nm). This result was discussed in terms of the kinetic energy of the sputtered particles ejected from the SiO target reaching the growing film surface.