Silicon Oxide Thin Films Prepared by Vacuum Evaporation and Sputtering Using Silicon Monoxide

Sasaki, Misao; Ehara, Takashi

doi:10.1088/1742-6596/417/1/012028

Cited by 11 publications

(11 citation statements)

References 20 publications

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“…It is noted that no signal was detected by X-ray diffraction (XRD) for the ZSGO nanowire arrays (Figure S1b). The Raman spectrum of the amorphous ZSGO nanowires (Figure g) exhibits several vibration peaks that belong to the bonds of O–Zn–O, O–Ge–O, Zn–O–Ge, − and Si–O, in addition to Si from the Si substrate, confirming the formation of ZSGO. It has been reported that Raman peaks at 745, 776, 801 cm –1 can be attributed to Ge–O–Zn symmetric, asymmetric vibrations and the stretching vibration of GeO 4 tetrahedra.…”

Section: Resultsmentioning

confidence: 81%

Amorphous Semiconductor Nanowires Created by Site-Specific Heteroatom Substitution with Significantly Enhanced Photoelectrochemical Performance

Zhang

Mao

et al. 2016

ACS Nano

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Semiconductor nanowires that have been extensively studied are typically in a crystalline phase. Much less studied are amorphous semiconductor nanowires due to the difficulty for their synthesis, despite a set of characteristics desirable for photoelectric devices, such as higher surface area, higher surface activity, and higher light harvesting. In this work of combined experiment and computation, taking Zn2GeO4 (ZGO) as an example, we propose a site-specific heteroatom substitution strategy through a solution-phase ions-alternative-deposition route to prepare amorphous/crystalline Si-incorporated ZGO nanowires with tunable band structures. The substitution of Si atoms for the Zn or Ge atoms distorts the bonding network to a different extent, leading to the formation of amorphous Zn1.7Si0.3GeO4 (ZSGO) or crystalline Zn2(GeO4)0.88(SiO4)0.12 (ZGSO) nanowires, respectively, with different bandgaps. The amorphous ZSGO nanowire arrays exhibit significantly enhanced performance in photoelectrochemical water splitting, such as higher and more stable photocurrent, and faster photoresponse and recovery, relative to crystalline ZGSO and ZGO nanowires in this work, as well as ZGO photocatalysts reported previously. The remarkable performance highlights the advantages of the ZSGO amorphous nanowires for photoelectric devices, such as higher light harvesting capability, faster charge separation, lower charge recombination, and higher surface catalytic activity.

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Section: Resultsmentioning

confidence: 81%

Amorphous Semiconductor Nanowires Created by Site-Specific Heteroatom Substitution with Significantly Enhanced Photoelectrochemical Performance

Zhang

Mao

et al. 2016

ACS Nano

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“…Prior studies suggest that the oxide fabrication technique strongly influences the microstructure of a-SiO x . Two structural models have most commonly been proposed: the ‘random bonding model’ 21 – 23 and the ‘random mixture model’ 24 – 28 . Differences in microstructure are clearly likely to affect the nature of the resistance switching behaviour; however, relatively few studies 29 , 30 have been carried out on this topic in the context of RRAM and we are not aware of such investigations for an a-SiO x oxide layer.…”

Section: Introductionmentioning

confidence: 99%

Intrinsic Resistance Switching in Amorphous Silicon Suboxides: The Role of Columnar Microstructure

Munde

Mehonić

et al. 2017

Sci Rep

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We studied intrinsic resistance switching behaviour in sputter-deposited amorphous silicon suboxide (a-SiOx) films with varying degrees of roughness at the oxide-electrode interface. By combining electrical probing measurements, atomic force microscopy (AFM), and scanning transmission electron microscopy (STEM), we observe that devices with rougher oxide-electrode interfaces exhibit lower electroforming voltages and more reliable switching behaviour. We show that rougher interfaces are consistent with enhanced columnar microstructure in the oxide layer. Our results suggest that columnar microstructure in the oxide will be a key factor to consider for the optimization of future SiOx-based resistance random access memory.

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“…Figure a compares Raman spectra before and after coating of Si onto the CNTs. The characteristic peak centered at 513 cm –1 that corresponded to the Raman phonon vibration of crystalline Si was observed for the composite yarn. Interestingly, the intensity ratios of G to D bands in CNTs were increased after the coating of Si.…”

mentioning

confidence: 96%

Winding Aligned Carbon Nanotube Composite Yarns into Coaxial Fiber Full Batteries with High Performances

et al. 2014

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Inspired by the fantastic and fast-growing wearable electronics such as Google Glass and Apple iWatch, matchable lightweight and weaveable energy storage systems are urgently demanded while remaining as a bottleneck in the whole technology. Fiber-shaped energy storage devices that can be woven into electronic textiles may represent a general and effective strategy to overcome the above difficulty. Here a coaxial fiber lithium-ion battery has been achieved by sequentially winding aligned carbon nanotube composite yarn cathode and anode onto a cotton fiber. Novel yarn structures are designed to enable a high performance with a linear energy density of 0.75 mWh cm(-1). A wearable energy storage textile is also produced with an areal energy density of 4.5 mWh cm(-2).

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Silicon Oxide Thin Films Prepared by Vacuum Evaporation and Sputtering Using Silicon Monoxide

Cited by 11 publications

References 20 publications

Amorphous Semiconductor Nanowires Created by Site-Specific Heteroatom Substitution with Significantly Enhanced Photoelectrochemical Performance

Amorphous Semiconductor Nanowires Created by Site-Specific Heteroatom Substitution with Significantly Enhanced Photoelectrochemical Performance

Intrinsic Resistance Switching in Amorphous Silicon Suboxides: The Role of Columnar Microstructure

Winding Aligned Carbon Nanotube Composite Yarns into Coaxial Fiber Full Batteries with High Performances

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