Nanocrystalline Piezoresistive Polysilicon Film by Aluminum-Induced Crystallization for Pressure-Sensing Applications

Patil, Suraj Kumar; Çelik‐Butler, Zeynep; Butler, Donald P.

doi:10.1109/tnano.2010.2054104

Cited by 19 publications

(16 citation statements)

References 20 publications

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“…Figure a,b shows transmission electron microscopy (TEM) micrographs of Al/Si thin films annealed at 500 °C for 4 and 8 h. Spherical shapes of the nanocrystallites for polycrystalline silicon are observed as a result of the layer exchange between aluminum and silicon during the metal-induced crystallization of amorphous silicon by aluminum. ,, These nanocrystallites of average size 5 nm accumulated and forming islands of the polycrystalline silicon as shown also in Figure b. It is observed that island sizes of the sample annealed for 4 h is small (about 50–80 nm) causing large grain boundaries as shown in the inset of Figure a.…”

Section: Resultsmentioning

confidence: 83%

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Fabrication of Nanocrystalline Silicon Thin Films Utilized for Optoelectronic Devices Prepared by Thermal Vacuum Evaporation

et al. 2020

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Metal-induced crystallization of amorphous silicon is a promising technique for developing high-quality and cheap optoelectronic devices. Many attempts tried to enhance the crystal growth of polycrystalline silicon via aluminum-induced crystallization at different annealing times and temperatures. In this research, thin films of aluminum/silicon (Al/Si) and aluminum/silicon/tin (Al/Si/Sn) layers were fabricated using the thermal evaporation technique with a designed wire tungsten boat. MIC of a:Si was detected at annealing temperature of 500 °C using X-ray diffraction, Raman spectroscopy, and field emission scanning electron microscopy. The crystallinity of the films is enhanced by increasing the annealing time. In the three-layer thin films, MIC occurs because of the existence of both Al and Sn metals forming highly oriented (111) silicon. Nanocrystalline silicon with dimensions ranged from 5 to 300 nm is produced depending on the structure and time duration. Low surface reflection and the variation of the optical energy gap were detected using UV–vis spectroscopy. Higher conductivities of Al/Si/Sn films than Al/Si films were observed because of the presence of both metals. Highly rectifying ideal diode manufactured from Al/Si/Sn on the FTO layer annealed for 24 h indicates that this device has a great opportunity for the optoelectronic device applications.

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Section: Resultsmentioning

confidence: 83%

“…This leads to accumulations of the Si island-like shape. The grain boundaries are reduced because of the increasing of the nanocrystallites for polycrystalline silicon and this may be occurred as a result of the layer exchange between aluminum and silicon during the metal induced crystallization of amorphous silicon by aluminum. ,, …”

Section: Resultsmentioning

confidence: 99%

Fabrication of Nanocrystalline Silicon Thin Films Utilized for Optoelectronic Devices Prepared by Thermal Vacuum Evaporation

et al. 2020

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“…The load (in grams) and the corresponding output voltage for each travel step was recorded. Next, the probe tip was moved up gradually and again the corresponding output voltage was noted down [16]. The measurements were performed for two different configurations, which were obtained by switching input and output ports.…”

Section: B Sensor Characterizationmentioning

confidence: 99%

“…With an input bias of 1V, the average change in the output voltage measured was 28.5 mV in response to a 4.64 mN applied force, corresponding to a 9.85 MPa pressure under the 10 μm radius probe tip. To calculate the pressure, the contact area between the membrane and the probe tip was estimated for the full diaphragm deflection of 7.5 μm using the method described in [16]. It was observed that output voltage changed linearly with the applied pressure for small deflections of the membrane so the resistance of the piezoresistors also changed linearly and thus the sensor's response.…”

Section: A Responsementioning

confidence: 99%

Flexible Conformal Micromachined Absolute Pressure Sensors

Ahmed

Chitteboyina

Butler

et al. 2015

J. Microelectromech. Syst.

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The fabrication and characterization of micromachined piezoresistive absolute pressure sensors in a flexible substrate is presented. A suspended aluminum oxide diaphragm containing nichrome (Ni-80%/Cr-20%) piezoresistive sensors backed by a vacuum cavity was utilized to form the sensor. The piezoresistors were placed in a half-Wheatstone bridge geometry to provide a linear response and thermal stability. The average value of the gauge factor of nichrome was measured to be 1.95. The average normalized Hooge coefficient K 1/ f was found to be 4.64 × 10 −11 for the nichrome piezoresistors. The pressure sensors displayed an average sensitivity of 1.25 nV/Pa and average value of noise equivalent pressure (NEPr) of 7.44 kPa in the bandwidth of 1-10 Hz in the 1/ f -noise limited regime. In the Johnson noise-limited regime, the NEPr was found to be 10 Pa in a 1-Hz bandwidth.[ 2014-0028]Index Terms-Absolute pressure sensor, flexible substrate, noise equivalent pressure.

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“…The load (in grams) and the corresponding output voltage for each travel step were recorded. Then, the probe tip was moved up gradually and again the corresponding output voltages were noted down [7]. The measurements were repeated with the input and output ports switched.…”

Section: B Characterizationmentioning

confidence: 99%

MEMS relative pressure sensor on flexible substrate

Ahmed

Butler

2011

2011 IEEE SENSORS Proceedings

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The fabrication and characterization of micromachined, piezoresistive, relative pressure sensors sandwiched between flexible polyimide layers is described. This work is motivated by the need to monitor force and pressure on nonplanar surfaces for structural health monitoring. 35-nm-thick nichrome (Ni-80%/Cr-20%) is used as a sensing material for the pressure sensor. The average value of the gauge factor of the nichrome was found to be 1.75.

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Nanocrystalline Piezoresistive Polysilicon Film by Aluminum-Induced Crystallization for Pressure-Sensing Applications

Cited by 19 publications

References 20 publications

Fabrication of Nanocrystalline Silicon Thin Films Utilized for Optoelectronic Devices Prepared by Thermal Vacuum Evaporation

Fabrication of Nanocrystalline Silicon Thin Films Utilized for Optoelectronic Devices Prepared by Thermal Vacuum Evaporation

Flexible Conformal Micromachined Absolute Pressure Sensors

MEMS relative pressure sensor on flexible substrate

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