Nanocrystalline Engineering Induced High Energy Storage Performances of Fatigue-Free Ba₂Bi_3.9Pr_0.1Ti₅O₁₈ Ferroelectric Thin Films

Abstract

Electrostatic capacitors, though presenting faster rate capability and higher power density, are hindered in applications because of their low energy density. Accordingly, many efforts in electrostatic capacitors, for electronics and electrical power systems, have mainly concentrated on the development of dielectric materials with high-energy density (U d) and charge–discharge efficiency (η) as well as good stability performances of thermal and fatigue endurance. Herein, we demonstrate that an excellent U d (∼90 J/cm3) and high η (∼84.2%), as well as outstanding fatigue cycles (1 × 108 st), frequency stability (20–2000 Hz), and a wide temperature range (RT ∼ 160 °C), can be attained in Ba2Bi3.9Pr0.1Ti5O18 (BBPT) ferroelectric thin films via nanocrystalline engineering. It is revealed that nanocrystalline engineering of the BBPT ferroelectric thin films could be controlled via the heat-treatment temperature, which could effectively regulate the breakdown strength and polarization. The enhanced breakdown strength and polarization of the nanocrystalline engineering is further verified through the theoretical phase-field simulations along with experimental results. These results indicate that this is a feasible and scalable route to develop dielectric thin film materials with a high energy storage capability.

Synergistic Optimization in a 0.90BaTiO3–0.08Bi(Ni0.5Zr0.5)O3–0.02BiFeO3 Thin Film with High Breakdown Strength and Energy Density

“…In addition, defined as a large spontaneous polarization material, the increase of BF content enhances P max of the material to some extent. Figure compares other systems of ceramic thin-film energy storage materials with this work. ,,,,,− Owing to its large BDS and enhancive polarization, the 0.90BT–0.08BNZ–0.02BF thin film possesses higher W rec of 114.3 J cm –3 and shows great advantages in pulse power applications.…”

Improved energy storage performance in flexible (PbLa)ZrO3 thin films via nanocrystalline engineering

“…The large domain and long-range order are effectively disturbed by the amorphous phase, which reduces the P r and hysteresis loss while maintaining the high E b . 30,31 Therefore, the energy storage performances of antiferroelectric (PbLa)ZrO 3 thin films can be improved through nanocrystalline engineering.…”

“…According to relevant results, low R rms is beneficial to improving the insulation performance of the films. [31][32][33] To further investigate the dielectric properties of (PbLa)ZrO 3 thin films at different annealing temperatures, the temperature dependence of dielectric loss (tan d) and dielectric constant (e r ) is shown in Fig. 4.…”

“…According to relevant results, low R rms is beneficial to improving the insulation performance of the films. 31–33…”

Realization of High Energy Storage Performance in BaTiO3-Bi(Co0.5Zr0.5)O3 Thin Film through Defect Construction in an Amorphous Structure

“…It is also believed that a two-fold enhancement of E b is achieved in the nanocrystalline�amorphous structure Ba 2 Bi 3.9 Pr 0.1 Ti 5 O 18 film compared with the crystal film. 32 Similarly, the introduction of t h e a m o r p h o u s p h a s e i n B i M g 0 . 5 T i x O 3 , 3 3 Sr 0.995 (Na 0.5 Bi 0.5 ) 0.005 (Ti 0.99 Mn 0.01 )O 3 , 34 BaZr 0.25 Ti 0.75 O 3 , 35 and other material systems synergistically contributes to the W rec , η and E b , thus further expanding the application prospect of dielectric ceramic film materials in harsh environments.…”