2009 IEEE MTT-S International Microwave Symposium Digest 2009
DOI: 10.1109/mwsym.2009.5166032
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Nanocrystalline diamond RF MEMS capacitive switch

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Cited by 7 publications
(7 citation statements)
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“…Additionally, it has been shown that these grain boundaries in NCD and UNCD can be doped with hydrogen, making them excellent leaky dielectric materials, and their use in radio frequency-MEMS capacitive switches as an insulating dielectric has been demonstrated. 53,54 In case of UNCD, the charging and discharging time constants are measured to be 100 μS, five to six orders of magnitude faster than those of conventional insulating dielectric films, and 12 billion cycles of operations have been demonstrated. 54 These results demonstrate a new paradigm in MEMS switch operation, and for the first time, this offers the possibility of operating capacitive MEMS switches almost continuously "on" without an adverse effect on switch reliability.…”
Section: Mems/nems Applications Of Uncd and Ncd Resonatorsmentioning
confidence: 99%
“…Additionally, it has been shown that these grain boundaries in NCD and UNCD can be doped with hydrogen, making them excellent leaky dielectric materials, and their use in radio frequency-MEMS capacitive switches as an insulating dielectric has been demonstrated. 53,54 In case of UNCD, the charging and discharging time constants are measured to be 100 μS, five to six orders of magnitude faster than those of conventional insulating dielectric films, and 12 billion cycles of operations have been demonstrated. 54 These results demonstrate a new paradigm in MEMS switch operation, and for the first time, this offers the possibility of operating capacitive MEMS switches almost continuously "on" without an adverse effect on switch reliability.…”
Section: Mems/nems Applications Of Uncd and Ncd Resonatorsmentioning
confidence: 99%
“…Moreover, the effects of accelerated stress on the pull-in voltage of nanocrystalline diamond switches are reported to be practically insignificant [5]. Finally, MEMS switches have been found to exhibit satisfactory RF performance over a wide frequency range [8,9].…”
Section: Introductionmentioning
confidence: 99%
“…No switch reliability was reported [60]. UNCD UNCD, ε r ≈ 5.2, is even leakier than NCD, about five orders of magnitude more than SiN x .…”
Section: Sin Xmentioning
confidence: 97%
“…It was recognized early on that a suitable dielectric should either be so 'perfect' that no significant charging can take place during the operational life of the device, or it should be so leaky that accumulated charge leaks away immediately upon the removal of the stressing voltage, as described in a Texas Instruments patent [47]. Many materials have been evaluated for their suitability as an RF MEMS switch dielectric, such as several types of SiN x [40,41,[48][49][50][51][52], SiO 2 [53,54], high-k dielectrics, such as Ta 2 O 5 [55,56] and HfO 2 and oxynitride [57,58], a composite dielectric with carbon nanotubes (CNTs) in SiN x [59], and even nanocrystalline diamond (NCD) [60] and ultrananocrystalline diamond (UNCD) [61].…”
Section: The Development and Characterization Of High-performance Die...mentioning
confidence: 99%