Nanocrystalline diamond films: transmission electron microscopy and Raman spectroscopy characterization

Nistor, L. C.; Landuyt, J. Van; Ralchenko, V.G.; Obraztsova, E. D.; Smolin, A.A.

doi:10.1016/s0925-9635(96)00743-1

Cited by 149 publications

(39 citation statements)

References 33 publications

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“…28 Another small peak is visible in some of the spectra centred at ~1555 Raman analysis of films grown with Ar and He dilution revealed the presence of peaks and relative intensities consistent with that expected for nanocrystalline diamond. 28,30,31 Broadened and shifted diamond lines (1333 cm -1 ) in all the films suggest a reduction in the grain size and high compressive stress 32 from the phonon confinement model. 26,33 This is expected to occur in nanocrystalline diamond and has been observed previously in nanocrystalline diamond films.…”

Section: Diamond and Non-diamond Carbonmentioning

confidence: 86%

The role of C2 in nanocrystalline diamond growth

Rabeau

Fan

John

et al. 2004

Journal of Applied Physics

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This paper presents findings from a study of nanocrystalline diamond (NCD) growth in a microwave plasma chemical vapour deposition (CVD) reactor. NCD films were grown using Ar/H 2 /CH 4 and He/H 2 /CH 4 gas compositions. The resulting films were characterised using Raman spectroscopy, scanning electron microscopy and atomic force microscopy. Analysis revealed an estimated grain size of the order of 50 nm, growth rates in the range 0.01 to 0.3 µm/h and sp 3 and sp 2 bonded carbon content consistent with that expected for NCD.The C 2 Swan band (d 3 П g ↔ a 3 П u ) was probed using cavity ring-down spectroscopy (CRDS) to measure the absolute C 2 (a) number density in the plasma during diamond film growth.The number density in the Ar/H 2 /CH 4 plasmas was in the range 2 to 4 x 10 12 cm -3 , but found to be present in quantities too low to measure in the He/H 2 /CH 4 plasmas. Optical emission 2 spectrometry (OES) was employed to determine the relative densities of the C 2 excited state (d) in the plasma.The fact that similar NCD material was grown whether using Ar or He as the carrier gas suggests that C 2 does not play a major role in the growth of nanocrystalline diamond.3

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Section: Diamond and Non-diamond Carbonmentioning

confidence: 86%

The role of C2 in nanocrystalline diamond growth

Rabeau

Fan

John

et al. 2004

Journal of Applied Physics

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“…The Raman feature near 1500 cm −1 may be related to the disordered sp 3 carbon in the films [34]. The intensity of this band increases proportionally with the intensity of the NCD feature in the films as observed by others also [35]. High density of defects and a significant amount of graphitic carbon are, in fact, expected in the growth of uniformly distributed short range nanocrystals of diamond because of their large grain boundary area.…”

Section: Properties Of Ncd Films Grown By Biased Enhanced Growthmentioning

confidence: 54%

“…Although the origin of this peak is assigned to the trans-polyacetylene [33], it is widely accepted to be related to NCD [34]. Absence of any peak near 1332 cm −1 , in spite of having an intense NCD feature, could be due to high density of defects incorporated in the films but could also be a sign of uniformly distributed shortrange sp 3 crystallites in the films [17,35]. Other significant bands near 1350 and 1580 cm −1 are well-known graphitic D and G bands.…”

Section: Properties Of Ncd Films Grown By Biased Enhanced Growthmentioning

confidence: 99%

Precursors for CVD Growth of Nanocrystalline Diamond

2004

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Variuos routes to grow nanocrystalline diamond films by chemical vapor deposition technique are reviewed. Among various routes, NCD films deposited on mirror polished silicon substrates by biased enhanced growth by microwave plasma chemical vapor deposition are described in detail. Qualitative concentration of NCD was assessed by Raman spectroscopy and X-ray diffraction patterns of the films. The hardness of the films approaches to that of natural diamond at optimized conditions while still having low amount of stress (< 1 GPa).

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“…The peak in this region of the spectrum has been seen by a number of researchers investigating nanocrystalline diamonds [18,19], and it was attributed to sp 3 bonding [20], mixed sp 2 -sp 3 bonding [21], sp 2 -sp 3 alternating hybridization [22], eclipsed sp 3 -like bonds forming fused pentagonal rings [23]. When found in char, this peak is directly related to the char reactivity, and it has been proposed that the "1180 cm , is responsible for active sites in carbon which are situated at graphite crystallite periphery.…”

Section: Structural Reorganizationmentioning

confidence: 72%

Ageing effects in nanographite monitored by Raman spectroscopy

Makarova

Riccò

Pontiroli

et al. 2008

Physica Status Solidi (b)

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The structural relaxation of nanographite ball‐milled in argon atmosphere and stored in evacuated ampoules, has been studied by monitoring the evolution of the Raman spectra. Reduction of some Raman bands associated with “in‐plane” structural defects, such as vacancies, dislocations or grain boundaries, and those associated with “out‐of‐plane” defects, such as stacking faults, is accompanied by the rise of new bands around 1180 and 2000 cm–1. The development of these bands is suppressed in nanographite samples exposed to a flux of pure anhydrous hydrogen. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Nanocrystalline diamond films: transmission electron microscopy and Raman spectroscopy characterization

Cited by 149 publications

References 33 publications

The role of C2 in nanocrystalline diamond growth

The role of C2 in nanocrystalline diamond growth

Precursors for CVD Growth of Nanocrystalline Diamond

Ageing effects in nanographite monitored by Raman spectroscopy

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