Nanocrystalline diamond film prepared by pulsed laser deposition in a hydrogen atmosphere

Hara, T.; Yoshitake, Tsuyoshi; Fukugawa, Tomohito; Zhu, Ling yun; Itakura, Masaru; Kuwano, Noriyuki; Tomokiyo, Yoshitsugu; Nagayama, Kazuaki

doi:10.1016/j.diamond.2003.10.055

Cited by 10 publications

(3 citation statements)

References 16 publications

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“…Ultrananocrystalline diamond/hydrogenated amorphous carbon composite (UNCD/a-C:H) films comprising diamond crystallites with diameters less than 10 nm and an a-C:H matrix 1) have attracted considerable attention from the physical and technological viewpoints because of the following features: (a) In contrast to singlecrystalline or polycrystalline diamond films, UNCD/a-C:H films can be easily grown on foreign solid-state substrates. 2) (b) UNCD/a-C:H films have higher temperature stability than sp 3 -rich a-C:H films, so-called diamond-like carbon (DLC) films. (c) They possess an extremely smooth surface.…”

Section: Introductionmentioning

confidence: 99%

Formation of p-Type Semiconducting Ultrananocrystalline Diamond/Hydrogenated Amorphous Carbon Composite Films by Boron Doping

Ohmagari

Yoshitake

Nagano

et al. 2010

Jpn. J. Appl. Phys.

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p-Type ultrananocrystalline diamond (UNCD)/hydrogenated amorphous carbon (a-C:H) composite films were fabricated by pulsed laser deposition using boron-doped graphite targets. Thermal analysis confirmed the occurrence of p-type conduction. The electrical conductivity increased with the doped amount of boron. An activation energy estimated from the Arrhenius plot was approximately 0.1 eV. Near-edge X-ray absorption fine structure spectra revealed that the Ã C-H peak weakened and the Ã C-B peak strengthened with an increase in the doped amount of boron. Fourier transform infrared spectroscopy showed that the sp 3 C-H peak weakened with the doped amount of boron. These probably indicate that the hydrogen atoms that terminate the dangling bonds of UNCD crystallites are partially replaced with boron atoms.

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Section: Introductionmentioning

confidence: 99%

Formation of p-Type Semiconducting Ultrananocrystalline Diamond/Hydrogenated Amorphous Carbon Composite Films by Boron Doping

Ohmagari

Yoshitake

Nagano

et al. 2010

Jpn. J. Appl. Phys.

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“…For PLD of DLC and related materials (such as nanocrystalline diamond), the most effective and widely used reactive gas is hydrogen, analogously to CVD of diamond films, which is usually carried out in a reactive atmosphere containing variable percentages of hydrogen. This gas plays a crucial role in diamond growth by selectively etching carbon atoms with sp 2 hybridization and stabilizing sp 3 bonds (see, for example, [93][94][95][96][97][98]).…”

Section: Type and Pressure Of Background Gasmentioning

confidence: 99%

Pulsed Laser Deposition of Carbon-Based Materials: A Focused Review of Methods and Results

Gaudiuso

2023

Processes

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Pulsed Laser Deposition (PLD) is a highly flexible experimental methodology for the growth of thin films of a broad variety of materials, based on the generation of laser-induced plasmas (LIP) with material ablated from a solid target and on the transfer of the ablated material to a substrate. This review is focused on carbon-based materials—specifically, diamond-like carbon (DLC), graphene and carbyne—and will both discuss the influence of the most critical experimental parameters on the obtained materials and present the experimental developments proposed in the recent literature to tailor the properties of the deposited films and optimize the standard PLD technique for production of various carbon-based materials.

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“…[5][6][7][8] Reports on investigations of UNCD fabricated by physical vapor deposition (PVD) methods are extremely scarce. In our previous study, we successfully demonstrated the homoand heterogrowth of UNCD=a-C:H films by the pulsed laser deposition (PLD) method, [9][10][11] which is a type of PVD method. Whereas C 2 dimers play a significant role in the growth of UNCD crystallites and the initial nucleation of diamond is a critical process for the growth of UNCD by CVD, it was found that UNCD crystallites can be grown by PLD without initial nucleation.…”

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confidence: 99%

Detection methods of diamond diffraction peaks in ultrananocrystalline diamond/amorphous carbon composite films by X-ray diffraction measurement with semiconductor counter detector

Hara

Nojiri

Hanada

et al. 2015

Jpn. J. Appl. Phys.

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Ultrananocrystalline diamond (UNCD)/amorphous carbon (a-C) composite films were fabricated by a coaxial arc plasma deposition (CAPD) method. Hereafter, UNCD with crystallite diameters of less than 10 nm in an a-C matrix could only be unambiguously detected by powder X-ray diffraction measurement using a synchrotron radiation source (SR-XRD) or transmission electron microscopy (TEM) observation. In this study, we succeeded in detecting diffraction peaks due to diamond-111 in the film by X-ray diffraction (XRD) using a Cu-Kα radiation source with a semiconductor counter detector. The obtained data were in agreement with the powder SR-XRD measurements of the deposited films.

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Nanocrystalline diamond film prepared by pulsed laser deposition in a hydrogen atmosphere

Cited by 10 publications

References 16 publications

Formation of p-Type Semiconducting Ultrananocrystalline Diamond/Hydrogenated Amorphous Carbon Composite Films by Boron Doping

Formation of p-Type Semiconducting Ultrananocrystalline Diamond/Hydrogenated Amorphous Carbon Composite Films by Boron Doping

Pulsed Laser Deposition of Carbon-Based Materials: A Focused Review of Methods and Results

Detection methods of diamond diffraction peaks in ultrananocrystalline diamond/amorphous carbon composite films by X-ray diffraction measurement with semiconductor counter detector

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