Nanocrystalline 3C-SiC Electrode for Biosensing Applications

Yang, Nianjun; Zhuang, Hao; Hoffmann, René; Smirnov, Waldemar; Hees, Jakob; Jiang, Xin; Nebel, Christoph E.

doi:10.1021/ac201315q

Cited by 82 publications

(56 citation statements)

References 39 publications

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“…Figure 2a shows the cyclic voltammogram of a GaN film electrode in 0.1M KCl, from which the electrochemical potential window can be drawn. A wide potential window of 3.5 V can be deduced, while the anodic potential limit is up to ~2.5 V, based on the definition of a current density threshold of 0.1mA/cm 2 [25]. Such a high potential window indicates wide application of the GaN electrode for electrochemistry.…”

Section: Page 8 Of 20mentioning

confidence: 99%

Anodic stripping voltammetry of silver(I) using unmodified GaN film and nanostructure electrodes

Liu

Yuan

et al. 2015

Applied Surface Science

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Section: Page 8 Of 20mentioning

confidence: 99%

Anodic stripping voltammetry of silver(I) using unmodified GaN film and nanostructure electrodes

Liu

Yuan

et al. 2015

Applied Surface Science

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“…The good biocompatibilities and diverse sensing abilities of diamond and β-SiC [31][32][33][34][35], make the diamond/β-SiC composite film also qualify as a good candidate for biosensor applications. However, while fabricating thin film based biosensors, the surfaces are more than often chemically or physically treated to make them clean and highly active [36][37][38], aiming at enhancing the adhesion of the chemical or biochemical species on the solid surface while minimizing the nonspecific adsorption of those species which disturbs the sensing process [39,40].…”

Section: Biosensor Applicationmentioning

confidence: 99%

Diamond/β-SiC Composite Thin Films: Preparation, Properties and Applications

Jiang

Zhuang

2014

Topics in Applied Physics

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Diamond/β-SiC composite films have been fabricated using chemical vapor deposition techniques. The ultimate goal is to create a superior material with combined advantages of both diamond and β-SiC for a wide range of applications, such as tribological and biological coatings, sensors, windows for harsh environment, and electronic devices etc. In this chapter, the recent processes made in the synthesis, characterization and applications of the diamond/β-SiC composite films are reviewed. IntroductionDriven by the ambition to technologically harness both diamond and β-SiC's numerous outstanding properties, the fabrication of diamond/β-SiC composite films was firstly launched using chemical vapor deposition technique in 1992 [1]. The ultimate goal of this activity is to create a superior material with combined advantages of both diamond and β-SiC for a wide range of applications. During the course of the time, good control over the crystallinity, phase distribution and orientation of both diamond and β-SiC phases have been achieved. The composite films have been applied to enhance the adhesion of diamond film on various technologically important substrates, as well as for the fabrication of DNA biosensors. This chapter will start from the basic knowledge of synthesizing diamond/β-SiC composite films, and then move on to present the main approaches in controlling their orientation, phase distribution and crystallinity. In the end of this chapter, the application of the composite film as coating for cutting tools and biosensors will be introduced.

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“…It possesses relatively high thermal conductivity (3.6 W cm −1 K −1 ), good thermal stability, high Young's modulus (450 GPa), and high breakdown voltage (>2 MV cm −1 ), properties which have already enabled various 3C‐SiC‐based high power and high energy devices 3. In addition to the advantages mentioned above, its high biocompatibility, and chemical stability qualify it as a promising candidate in the field of biomedical applications such as biocompatible coatings on implants, insulating coatings on implantable microelectrodes, and biosensors 4–10. All the 3C‐SiC‐based applications mentioned still require tremendous experimental efforts in order to obtain various 3C‐SiC with different structures or morphologies.…”

Section: Introductionmentioning

confidence: 99%

Low Temperature Hetero‐Epitaxial Growth of 3C‐SiC Films on Si Utilizing Microwave Plasma CVD

Zhuang¹,

Zhang²,

Staedler³

et al. 2013

Chemical Vapor Deposition

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Microwave plasma (MW)CVD is used for the first time in the low-temperature, hetero-epitaxial growth of 3C-SiC films on Si using a gas mixture of tetramethylsilane (TMS) and hydrogen. Good epitaxial matching between the 3C-SiC film and Si substrate is obtained in the epitaxially grown 3C-SiC films. Further investigation reveals that microwave powder density and substrate temperature play an important role in the determination of the orientation, SiC/Si interface structure, and morphology of 3C-SiC films. The presented results show MWCVD might be a potent approach in the future in obtaining large-scale, highquality, single-crystalline 3C-SiC films.

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Nanocrystalline 3C-SiC Electrode for Biosensing Applications

Cited by 82 publications

References 39 publications

Anodic stripping voltammetry of silver(I) using unmodified GaN film and nanostructure electrodes

Anodic stripping voltammetry of silver(I) using unmodified GaN film and nanostructure electrodes

Diamond/β-SiC Composite Thin Films: Preparation, Properties and Applications

Low Temperature Hetero‐Epitaxial Growth of 3C‐SiC Films on Si Utilizing Microwave Plasma CVD

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