Low Temperature Hetero‐Epitaxial Growth of 3C‐SiC Films on Si Utilizing Microwave Plasma CVD

Abstract

Microwave plasma (MW)CVD is used for the first time in the low-temperature, hetero-epitaxial growth of 3C-SiC films on Si using a gas mixture of tetramethylsilane (TMS) and hydrogen. Good epitaxial matching between the 3C-SiC film and Si substrate is obtained in the epitaxially grown 3C-SiC films. Further investigation reveals that microwave powder density and substrate temperature play an important role in the determination of the orientation, SiC/Si interface structure, and morphology of 3C-SiC films. The presented results show MWCVD might be a potent approach in the future in obtaining large-scale, highquality, single-crystalline 3C-SiC films.

Abiotic Oxygen Reduction Reaction Catalysts Used in Microbial Fuel Cells

“…Figure 6 shows the XRD pattern of the as‐grown film. The peak at 2 θ = 35.64 corresponds to cubic SiC (111), which is consistent with the literature 14,15. The Si (220) peak appeared at 2 θ = 47.26 and came from Si (110) substrate.…”

Effect of C/Si ratio on the characteristics of 3C-SiC films deposited on Si(100) base on the four-step non-cooling process

“…One mechanism is the formation of defects by excess carbon species and another is the etching of atomic hydrogen. The current process features a carbon-rich atmosphere (C/Si ratio !1.5), therefore it is potentially possible for the excess carbon species to bond to the SiC crystals in an unintended manner, creating defects which serve as secondary nucleation sites, inhibiting the growth of the SiC crystals [11]. Atomic hydrogen can etch as-grown SiC crystals and especially the defect sites on the crystals are preferential etching sites for the atomic hydrogen during the process.…”

Epitaxial Cubic Silicon Carbide Photocathodes for Visible‐Light‐Driven Water Splitting

“…In contrast, the average crystal size of a microcrystalline 3C‐SiC film is larger than 200 nm (Figure b), and its surface is higher roughness in comparison to that of a nanocrystalline 3C‐SiC. For an epitaxial 3C‐SiC film, densely packed 3C‐SiC crystals grow along the ⟨110⟩ directions, which is attributed to the heteroepitaxial growth of 3C‐SiC crystals on a (001) Si substrate …”

“…Furthermore, the direct employment of a 3C‐SiC film avoids the usage of organic binders in the case of SiC nanoparticles. The reports on PEC water splitting using 3C‐SiC films are actually seldom, mainly due to the complex processes during the synthesis of 3C‐SiC films …”