Nanocatalyst-induced hydroxyl radical (·OH) slurry for tungsten CMP for next-generation semiconductor processing

Poddar, Maneesh Kumar; Ryu, Heon-Yul; Yerriboina, Nagendra Prasad; Jeong, Yeon-Ah; Lee, Jung Hwan; Kim, Tae-Gon; Kim, Jae Hyun; Park, Jong-Dai; Lee, Mingun; Park, Chang-Yong; Han, Seongjun; Choi, Jae-Gon; Park, Jin-Goo

doi:10.1007/s10853-019-04239-4

Cited by 14 publications

(4 citation statements)

References 28 publications

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“…PNDA (p-nitrosodimethylaniline, Sigma-Aldrich), known as the •OH trap, was used for the •OH detection after being mixed with cleaning solution containing single or mixed oxidants. 10,11 The prepared solution in 30 μl mixed with 2 ml of PNDA in a 10 ml cuvette cell before being immediately used for the UV-vis analysis.…”

Section: Methodsmentioning

confidence: 99%

Cleaning Nanoceria Particles by Diluted HNO₃ with H₂O₂ Mixture (NPM) Solution at Different Temperatures

Wang¹,

Wu²,

Qiu³

et al. 2023

ECS J. Solid State Sci. Technol.

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It is difficult to remove nanoceria abrasives from the SiO2 substrate after the shallow trench isolation (STI) chemical mechanical polishing process. In this work, we studied the cleaning behavior of ceria particles by using an acidic cleaning solution instead of normal sulfuric acid and hydrogen peroxide mixture solution (SPM) at high temperatures (above 85℃) and low temperatures (below 30℃). The solution, named as NPM, consists of HNO3 (1-2 vol%), H2O2 (5-10 vol %), and deionized water (DIW). It is found that NPM may dis-solve nanoceria particles at high temperatures with higher cleaning efficiency (CE) than that of SPM. NPM can clean the A90 (90 nm ceria) particles under ultrasonic/megasonic at low temperatures, while SPM has poor CE at 20℃. The redox reaction of NPM and its effect on cleaning mechanism were systematically studied.

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Section: Methodsmentioning

confidence: 99%

Cleaning Nanoceria Particles by Diluted HNO₃ with H₂O₂ Mixture (NPM) Solution at Different Temperatures

Wang¹,

Wu²,

Qiu³

et al. 2023

ECS J. Solid State Sci. Technol.

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“…However, in the W CMP process, a higher catalyst Fe(NO 3 ) 3 concentration will generate O 2 bubbles in the abrasive particles in situ, which will cause particle pollution issue [111]. The results shown that, compared with Fe(NO 3 ) 3 catalyst, the novel nonionic, thermally activated FeSi nanocatalyst has higher W RR [53]. Malic acid is usually used as a pH regulator or chelating agent, and it also has the advantage of highly selective polishing in the CMP of W film and SiO 2 film [42].…”

Section: Steelmentioning

confidence: 99%

A review: green chemical mechanical polishing for metals and brittle wafers

Liu¹,

Zhang²,

Wu³

et al. 2021

J. Phys. D: Appl. Phys.

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Chemical mechanical polishing (CMP) is the most effective technique to obtain global and local planarization of metal and brittle surfaces. Conventionally, CMP slurries contain strong acids, alkalis, or hazardous chemicals, which easily cause widespread environmental pollution and are harmful to the operators. It is a challenge to develop a novel green CMP slurry with eco-friendly and non-toxic compositions. Some substances with special structures contain versatile functional groups and have unique physical and chemical properties, including excellent chelating ability, ionization activity, biocompatibility and biodegradability, which have attracted the interest of CMP processing techniques. Therefore, researchers have begun to explore CMP slurries composed of environmentally friendly compositions. This review discussed the latest developments in the field of green CMP of metals and brittle wafers. The research on green CMP slurries was summarized and the future of the field was discussed.

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“…5 Barrierless metallization is another potential advantage of Mo, due to its high adhesion energy with low-k. 2,6 For the integration of Mo in interconnects, a chemical mechanical planarization (CMP) process for Mo needs to be developed, which requires a proper slurry with a high polishing rate and minimal CMP defects. Metal CMP slurries use oxidizers, most frequently H 2 O 2 , [8][9][10] to modify the surface into an easily removable metal oxide film. [11][12][13] The literature on Mo CMP is limited because Mo has only recently begun to gain attention.…”

mentioning

confidence: 99%

Effects of H₂O₂ and pH on the Chemical Mechanical Planarization of Molybdenum

Ryu¹,

Teugels²,

Devriendt³

et al. 2021

ECS J. Solid State Sci. Technol.

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The effects of H 2 O 2 on the chemical etching and removal rate (RR) of molybdenum (Mo) were investigated. Static etch rate (SER) and chemical mechanical planarization (CMP) experiments were performed using H 2 O 2 -based slurries at different pH levels. X-ray photoelectron spectroscopy (XPS) and potentiodynamic polarization analysis showed the formation of Mo oxides by the reaction between Mo and H 2 O 2 . The Mo SER, which increased with H 2 O 2 concentration, supported the dissolution of Mo oxides through the formation of peroxo Mo complexes with H 2 O 2 . The CMP removal mechanism was demonstrated by comparing the CMP RR with and without silica abrasives. In addition, the Mo oxidation rate by H 2 O 2 on a millisecond time scale was characterized with chronoamperometry to explain different RRs at pH values ranging from 2 to 8. The CMP RR of Mo was high at pH 2 and pH 10; however, pH 2 showed a lower SER than pH 10, leading to lower surface roughness.

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Nanocatalyst-induced hydroxyl radical (·OH) slurry for tungsten CMP for next-generation semiconductor processing

Cited by 14 publications

References 28 publications

Cleaning Nanoceria Particles by Diluted HNO₃ with H₂O₂ Mixture (NPM) Solution at Different Temperatures

Cleaning Nanoceria Particles by Diluted HNO₃ with H₂O₂ Mixture (NPM) Solution at Different Temperatures

A review: green chemical mechanical polishing for metals and brittle wafers

Effects of H₂O₂ and pH on the Chemical Mechanical Planarization of Molybdenum

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Nanocatalyst-induced hydroxyl radical (·OH) slurry for tungsten CMP for next-generation semiconductor processing

Cited by 14 publications

References 28 publications

Cleaning Nanoceria Particles by Diluted HNO3 with H2O2 Mixture (NPM) Solution at Different Temperatures

Cleaning Nanoceria Particles by Diluted HNO3 with H2O2 Mixture (NPM) Solution at Different Temperatures

A review: green chemical mechanical polishing for metals and brittle wafers

Effects of H2O2 and pH on the Chemical Mechanical Planarization of Molybdenum

Contact Info

Product

Resources

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Cleaning Nanoceria Particles by Diluted HNO₃ with H₂O₂ Mixture (NPM) Solution at Different Temperatures

Cleaning Nanoceria Particles by Diluted HNO₃ with H₂O₂ Mixture (NPM) Solution at Different Temperatures

Effects of H₂O₂ and pH on the Chemical Mechanical Planarization of Molybdenum