Nano‐scaled Biomolecular Field‐Effect Transistors: Prototypes and Evaluations

Maruccio, Giuseppe; Visconti, Paolo; Biasco, Adriana; Bramanti, A.; Torre, A. Della; Pompa, Pier Paolo; Frascerra, V.; Arima, Valentina; D’Amone, Eliana; Cingolani, R.; Rinaldi, R.

doi:10.1002/elan.200403073

Cited by 14 publications

(4 citation statements)

References 45 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…15,16 The majority of research in this area has focused on the grafting methods or the influence on the surface (or interface) properties of bulk semiconductors. Related work is in the use of semiconductor devices as sensors, specifically the chemically sensitive field-effect transistors (CHEMFETs) [17][18][19][20] and the molecularly controlled semiconductor resistor based on transistors. [21][22][23] In these devices, however, the chemicals or molecules are usually attached on the gate metal and/or insulator layer of a field-effect transistor (FET), between source and drain of an ungated FET, or on the surface metal of Schottky diodes.…”

Section: Introductionmentioning

confidence: 99%

“…Several techniques have been used to covalently attach molecules directly onto silicon surfaces. − The Si−C bond formed using these methods is both thermodynamically and kinetically stable due to its high bond strength (3.5 eV) and low polarity. , The majority of research in this area has focused on the grafting methods or the influence on the surface (or interface) properties of bulk semiconductors. Related work is in the use of semiconductor devices as sensors, specifically the chemically sensitive field-effect transistors (CHEMFETs) − and the molecularly controlled semiconductor resistor based on transistors. − In these devices, however, the chemicals or molecules are usually attached on the gate metal and/or insulator layer of a field-effect transistor (FET), between source and drain of an ungated FET, or on the surface metal of Schottky diodes. So far, little research has been conducted showing controlled modulation of semiconductor devices by grafting molecular layers onto oxide-free active device areas, and particularly via silicon−sp 2 -hybridized-carbon bonds.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Controlled Modulation of Conductance in Silicon Devices by Molecular Monolayers

et al. 2006

View full text Add to dashboard Cite

We have controllably modulated the drain current (I(D)) and threshold voltage (V(T)) in pseudo metal-oxide-semiconductor field-effect transistors (MOSFETs) by grafting a monolayer of molecules atop oxide-free H-passivated silicon surfaces. An electronically controlled series of molecules, from strong pi-electron donors to strong pi-electron acceptors, was covalently attached onto the channel region of the transistors. The device conductance was thus systematically tuned in accordance with the electron-donating ability of the grafted molecules, which is attributed to the charge transfer between the device channel and the molecules. This surface grafting protocol might serve as a useful method for controlling electronic characteristics in small silicon devices at future technology nodes.

show abstract

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Controlled Modulation of Conductance in Silicon Devices by Molecular Monolayers

et al. 2006

View full text Add to dashboard Cite

show abstract

“…Understanding the molecule-level relationship between protein-mediated electron transfer and structure is of considerable significance not only in enhancing our understanding of events central to life, but also in the potential exploitation of novel derived molecular devices. − To date, significant experimental effort has been applied to bioelectrochemical and bioelectronic analyses at both the macro- and nanoscales. ,− These studies have not only clarified the relationship between structure and tunnel conductance but also refined our ability to interface these molecules to man-made electrodes.…”

Section: Introductionmentioning

confidence: 99%

Molecularly Resolved Protein Electromechanical Properties

et al. 2007

View full text Add to dashboard Cite

Previous work has shown that protein molecules can be trapped between the conductive surfaces presented by a metal-coated AFM probe and an underlying planar substrate where their molecule-specific conductance characteristics can be assayed. Herein, we demonstrate that transport across such a derived metal-protein-electrode junction falls within three, pressure-dependent, regimes and, further, that pressure-dependent conductance can be utilized in analyzing temporal variations of protein fold. Specifically, the electronic and mechanical properties of the metalloprotein azurin have been characterized under conditions of anisotropic vertical compression through the use of a conducting atomic force microscope (CP-AFM). By utilizing the ability of azurin to chemically self-assemble on the gold surface presented either by the apex of a suitably coated AFM probe or a planar metallic surface, molecular-level transport characteristics are assayable. Under conditions of low force, typically less than 2 nN, the weak physical and electronic coupling between the protein and the conducting contacts impedes tunneling and leads to charge buildup followed by dielectric breakdown. At slightly increased force, 3-5 nN, the copper protein exhibits temporal electron occupation with observable negative differential resistance, while the redox-inactive zinc mutant does not. At imposed loads greater than 5 nN, appreciable electron tunneling can be detected even at low bias for both the redox-active and -inactive species. Dynamic current-voltage characteristics have been recorded and are well-described by a modified Simmons tunneling model. Subsequent analyses enable the electron tunneling barrier height and barrier length to be determined under conditions of quantified vertical stress. The variance observed describes, in essence, the protein's mechanical properties within the confines of the tunnel junction.

show abstract

“…However, all of these methods have several drawbacks, such as complicated preparation process, long analysis time, relatively high cost and low sensitivity. Transistor-based sensors have the advantage of their microminiaturization, fast response, mass production and easy to overcome some limitations for urea analysis [10][11][12][13]. Many biosensors based on transistor have been developed for the determination of urea in wide range of sample medium [14].…”

Section: Introductionmentioning

confidence: 99%

Urea Detection of Electrochemical Transistor Sensors based on Polyanline (PANI)/MWCNT/Cotton Yarns

et al. 2021

View full text Add to dashboard Cite

A cotton yarn biosensor based on electrochemical transistor functionalized with MWCNT and PANI was developed for the detection of urea. The transistors based on PANI/MWCNT/cotton yarns under optimized MWCNT concentration has been obtained, which exhibited high on/off current ratio, fast response time, and good operational stability. A transistor-based urea sensor was prepared from PANI/MWCNT/cotton yarns, which could monitor urea in the 1 nM-1 mM linear range with the correlation coefficient of 0.9716. Furthermore, the sensor showed superior reproducibility and high specificity. The practical applications of the proposed sensor were also confirmed. These results indicate the flexible transistor can be used as an efficient platform for biological detection in body fluids.

show abstract

Nano‐scaled Biomolecular Field‐Effect Transistors: Prototypes and Evaluations

Cited by 14 publications

References 45 publications

Controlled Modulation of Conductance in Silicon Devices by Molecular Monolayers

Controlled Modulation of Conductance in Silicon Devices by Molecular Monolayers

Molecularly Resolved Protein Electromechanical Properties

Urea Detection of Electrochemical Transistor Sensors based on Polyanline (PANI)/MWCNT/Cotton Yarns

Contact Info

Product

Resources

About