Nano-dot arrays with a bit pitch and a track pitch of 25 nm formed by EB writing for 1 Tb/in2 storage

Electron Beam Lithography for Fine Dot Arrays with Nanometer-Sized Dot and Pitch

“…Figure 3.3 shows SEM images of ZEP520 pit patterns drawn at an exposure dosage of around 180 C/cm 2 . The figure shows that the minimum pit arrays were drawn with a minimum pit diameter of <20 nm at a pitch of 40 nm x 60 nm [13]. We could not form higherpacked pit patterns than this.…”

“…3. Formation of highly packed fine pit and dot arrays using EB drawing with positive and negative resists [7,13] Fine bit arrays formation for an ultrahigh density optical and magnetic recordings has experimentally been studied using EB drawing with a high resolution scanning electron microscope (HR-SEM), a drawing controller [7] and positive and negative EB resists. As experimental results, calixarene negative EB resist is very suitable to form an ultrahigh packed resist dot arrays pattern, comparing with ZEP520 positive resist as same as described in previous section.…”

Extremely Small Proximity Effect in 30 keV Electron Beam Drawing with Thin Calixarene Resist for 20×20 nm2Pitch Dot Arrays

“…Since Hosaka et al have introduced an EB writing system with a field emission (FE) electron gun for very fine pattern writing, 2) nanometer sized pattern fabrications have almost been used by this type system, and have been applied to quantum device, optical and magnetic recording media. [3][4][5][6][7] The results were, however, very far from 1 trillion bits (Tb)/in. 2 recording.…”

“…2 recording. Recently, Fujita et al have first reported that EB lithography using p-methyl-methylacetoxycalix [6]arene demonstrated 10-nm-wide line patterning. 8) Then, Ishida et al have introduced p-methyl-methylacetoxy-calix [4]arene (calixarene in this paper).…”

NIL mold manufacturing using self-organized diblock copolymer as patterning template

“…Hosaka et al have reported fabrication of 25nm-pitch dot resist pattern using EB, where calixarene was utilized as a resist. 4,5 However, EB lithography is unlikely to lead to low-cost production, because of its low throughput. As an alternative method, self-organizing materials were investigated.…”