Abstract:Palladium thin films were deposited on previously oxidized silicon wafers using E-beam evaporation aiming hydrogen sensing. The hydrogen incorporation after different kinds of annealings was studied. The changes in the film characteristics during hydrogen incorporation at different temperatures were evaluated using Atomic Force Microscopy (AFM), X-Ray Difraction (XRD) techniques, Energy Dispersion System together a MEV microscope (EDS) and Rutherford Backscattering Spectrometry (RBS). The hydrogen incorporatio… Show more
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