Nano-Crossbar Arrays for Nonvolatile Resistive RAM (RRAM) Applications

Nauenheim, C.; Kügeler, C.; Rüdiger, Andreas; Waser, Rainer; Flocke, A.; Noll, Tobias G.

doi:10.1109/nano.2008.141

Cited by 22 publications

(14 citation statements)

References 6 publications

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“…The increase of memory integration density demands the smaller structures. The most attractive structure for ReRAM is the nano-crossbar array, where the simple memory elements, have cell sizes of 4F 2 per bit, when F is the half-pitch of the array [7,8]. The development of high resolution etching processes for TiO 2 thin film is necessary for schemes involving nano-crossbar arrays.…”

Section: Introductionmentioning

confidence: 99%

Dry Etching Properties of TiO₂Thin Film Using Inductively Coupled Plasma for Resistive Random Access Memory Application

Joo¹,

Woo²,

Kim³

2012

Transactions on Electrical and Electronic Materials

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In this work, we investigated to the etching characteristics of TiO 2 thin film and the selectivity using the inductively coupled plasma system. The etch rate and the selectivity were obtained with various gas mixing ratios. The maximum etch rate of TiO 2 thin film was 61.6 nm/min. The selectivity of TiO 2 to TiN, and TiO 2 to SiO 2 were obtained as 2.13 and 1.39, respectively. The etching process conditions are 400 W for RF power,-150 V for DC-bias voltage, 2 Pa for the process pressure, and 40℃ for substrate temperature. The chemical states of the etched surfaces were investigated with X-ray photoelectron spectroscopy (XPS). Its analysis showed that the etching mechanism was based on the physical and chemical pathways in the ion-assisted physical reaction.

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Section: Introductionmentioning

confidence: 99%

Dry Etching Properties of TiO₂Thin Film Using Inductively Coupled Plasma for Resistive Random Access Memory Application

Joo¹,

Woo²,

Kim³

2012

Transactions on Electrical and Electronic Materials

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“…Due to the immunity of parylene-C to the photolithographic solvents, with the standard photolithography and room-temperature polymer CVD methods, this parylene-based device can be integrated in the back-end process of the CMOS circuits without contamination and has little influence on the fabricated circuits. Thus, it is 0018-9383/$31.00 © 2012 IEEE very beneficial to the high-density low-cost applications, such as with crossbar array architecture [12].…”

Section: Methodsmentioning

confidence: 99%

Resistive Switching in Organic Memory Device Based on Parylene-C With Highly Compatible Process for High-Density and Low-Cost Memory Applications

Huang

Tang

Kuang

et al. 2012

IEEE Trans. Electron Devices

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In this paper, the resistive switching behavior of a single-component-polymer resistive memory device based on polychloro-para-xylylene (parylene-C) is comprehensively studied. With the excellent chemical stability and high process compatibility of parylene-C, an 8 × 8 crossbar array with a sandwiched structure of parylene-C and active electrodes is fabricated, which can be integrated in the CMOS back-end process and shows great potentials for future transparent, low-cost, flexible, and high-density nonvolatile memory applications. This organic memory device exhibits excellent performance with a 10 7 ON/OFF current ratio, nanosecond set/reset speed, and low switching voltages, as well as good retention and cycling endurance behaviors. The switching mechanism is systematically investigated with the comparison between active electrodes (Al, Cu, or Ag) and an inert electrode (Pt), as well as the dependence on temperature and device area.Index Terms-Organic memory, polychloro-para-xylylene (parylene-C), polymer, resistive switching, resistive random access memory (RRAM).

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“…In recent years, significant research efforts resulted in a variety of RRAM models proposed in the literature . All the available approaches, though offering different physical perspectives, display some common features resulting from experimental evidences: The device in pristine state is a leaky insulator, revealing area‐dependent charge transport . After a controlled breakdown, i.e., the forming process charge transport shows no area dependence, due to the formation of a localized conduction path, i.e., the conductive filament (CF). After the CF is formed, the device can be repeatedly switched between LRS and HRS through set and reset operations . …”

Section: Physics‐based Simulation Of Hfo2 Rrammentioning

confidence: 99%

“…The forming process in HfO 2 ‐based RRAM devices is typically described as the controlled breakdown of the oxide layer . The description of this process requires considering the main charge transport mechanisms occurring in the dielectric layer, as well as the mechanisms responsible for structural modifications.…”

Section: Physics‐based Simulation Of Hfo2 Rrammentioning

confidence: 99%

A multi‐scale methodology connecting device physics to compact models and circuit applications for OxRAM technology

Puglisi

Deleruyelle

Portal

et al. 2016

Physica Status Solidi (a)

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RRAM technology relying on transitional metal oxides (namely OxRAM) is about to reach the industrial stage. Nevertheless the physical-based understanding of the material and process implications at device and circuit levels is still not completely clear, hindering the full industrial exploitation of the OxRAM technology. In this context, this article presents a multi-scale methodology that connects the microscopic material properties to the electrical behavior of OxRAM devices at the circuit level. Microscopic models describing OxRAM operation (i.e., forming, resistive switching) and variability (e.g., cycle-to-cycle, RTN) will be reviewed and used for the development of compact models that will allow investigating the potential of this technology at the circuit level. An overview of some innovative applications involving OxRAM will be finally presented

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Nano-Crossbar Arrays for Nonvolatile Resistive RAM (RRAM) Applications

Cited by 22 publications

References 6 publications

Dry Etching Properties of TiO₂Thin Film Using Inductively Coupled Plasma for Resistive Random Access Memory Application

Dry Etching Properties of TiO₂Thin Film Using Inductively Coupled Plasma for Resistive Random Access Memory Application

Resistive Switching in Organic Memory Device Based on Parylene-C With Highly Compatible Process for High-Density and Low-Cost Memory Applications

A multi‐scale methodology connecting device physics to compact models and circuit applications for OxRAM technology

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Nano-Crossbar Arrays for Nonvolatile Resistive RAM (RRAM) Applications

Cited by 22 publications

References 6 publications

Dry Etching Properties of TiO2Thin Film Using Inductively Coupled Plasma for Resistive Random Access Memory Application

Dry Etching Properties of TiO2Thin Film Using Inductively Coupled Plasma for Resistive Random Access Memory Application

Resistive Switching in Organic Memory Device Based on Parylene-C With Highly Compatible Process for High-Density and Low-Cost Memory Applications

A multi‐scale methodology connecting device physics to compact models and circuit applications for OxRAM technology

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Product

Resources

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Dry Etching Properties of TiO₂Thin Film Using Inductively Coupled Plasma for Resistive Random Access Memory Application

Dry Etching Properties of TiO₂Thin Film Using Inductively Coupled Plasma for Resistive Random Access Memory Application