Nano-channel InAlN/GaN Fin-HEMTs for ultra-high-speed electronics

Arulkumaran, S.; Ng, G. I.

doi:10.1109/imfedk.2015.7158490

Cited by 3 publications

(1 citation statement)

References 4 publications

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“…However, the conventional planar HEMTs suffer from the intrinsically depletion-mode operation and buffer leakage current. To achieve normally-off devices with low off-state current, several groups have developed fin-gate HEMTs (Fin-HEMTs) [13][14][15][16][17][18]. The Fin-HEMTs show significant positive shift of threshold voltage by narrowing the fin width, and better leakage current suppress capability due to enhanced channel control from the gate sidewalls.…”

Section: Introductionmentioning

confidence: 99%

High‐voltage AlInN/GaN superjunction fin‐gate high electron mobility transistor for power‐switching application

Zhou

Dai

et al. 2021

Micro & Nano Letters

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An AlInN/GaN superjunction fin-gate high electron mobility transistor (SJFin-HEMT) is proposed in this work. A superjunction region with GaN/AlInN/GaN/AlInN/GaN structure is defined between the gate and drain, and two-dimensional-hole-gas/twodimensional-electron-gas/two-dimensional-hole-gas/two-dimensional-electron-gas (2DHG/2DEG/2DHG/2DEG) are respectively induced due to the polarization charges at the heterojunction interfaces. The 2DHGs and 2DEGs compensate each other, resulting a charge balanced superjunction in the gate-drain spacing, thus inducing a uniform electric field distribution under off-state maximizing the breakdown voltage. Additionally, because the current flows through both the 2DEGs, higher output current and lower on-state resistance are observed in contrast to the conventional Fin-HEMT. Simulation results show breakdown voltage of 2957 V (V GS = -6 V) and on-state resistance of 0.31 mΩ⋅cm 2 (V DS = 0.1 V, V GS = 0 V) for the SJFin-HEMT, comparing with that of 241 V and 0.36 mΩ⋅cm 2 for the conventional Fin-HEMT.This is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.

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Section: Introductionmentioning

confidence: 99%

High‐voltage AlInN/GaN superjunction fin‐gate high electron mobility transistor for power‐switching application

Zhou

Dai

et al. 2021

Micro & Nano Letters

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A comparison of dynamic thermal characteristics of planar and Fin GaN HEMTs

Chen

Sun

2020

Micro & Optical Tech Letters

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In this article, the dynamic thermal characteristic of planar and FinFET HEMTs are investigated using an analytical thermal impedance extraction method. The difference of dynamic thermal characteristic between GaN‐based planar and FinFET HEMTs has been compared. The results show that the FinFET transistor is less affected by thermal effect than the planar transistor by 50%. As the temperature rises significantly, the output power of the FinFET transistor is greater than that of the planar transistor. The results provide a reliable basis for selecting thermal management algorithms for circuits carrying various frequency components.

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Technology of sub-100 nm InAlN/GaN HEMTs on silicon with suppressed leakage current

Cui

Zeng

2021

Solid-State Electronics

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Nano-channel InAlN/GaN Fin-HEMTs for ultra-high-speed electronics

Cited by 3 publications

References 4 publications

High‐voltage AlInN/GaN superjunction fin‐gate high electron mobility transistor for power‐switching application

High‐voltage AlInN/GaN superjunction fin‐gate high electron mobility transistor for power‐switching application

A comparison of dynamic thermal characteristics of planar and Fin GaN HEMTs

Technology of sub-100 nm InAlN/GaN HEMTs on silicon with suppressed leakage current

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