Abstract:An AlInN/GaN superjunction fin-gate high electron mobility transistor (SJFin-HEMT) is proposed in this work. A superjunction region with GaN/AlInN/GaN/AlInN/GaN structure is defined between the gate and drain, and two-dimensional-hole-gas/twodimensional-electron-gas/two-dimensional-hole-gas/two-dimensional-electron-gas (2DHG/2DEG/2DHG/2DEG) are respectively induced due to the polarization charges at the heterojunction interfaces. The 2DHGs and 2DEGs compensate each other, resulting a charge balanced superjunct… Show more
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