2017
DOI: 10.1039/c7tc00327g
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N-Unsubstituted thienoisoindigos: preparation, molecular packing and ambipolar organic field-effect transistors

Abstract: N-Unsubstituted thienoisoindigo and the diphenyl derivative are prepared and these molecules exhibit ambipolar performance in organic thin film transistors.

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Cited by 26 publications
(36 citation statements)
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“…This configuration is very similar to the geometries found in molecular crystals of thienoisoindigos with linear alkyl chains and is further supported by gas sorption analysis (see below). 30 , 31 …”
Section: Resultsmentioning
confidence: 99%
“…This configuration is very similar to the geometries found in molecular crystals of thienoisoindigos with linear alkyl chains and is further supported by gas sorption analysis (see below). 30 , 31 …”
Section: Resultsmentioning
confidence: 99%
“…As further detailed in the Supporting Information, the polymers studied herein were synthesized using established synthetic methodologies by first constructing the isoindigo, 7,7'-diazaisoindigo and thienoisoindigo cores with amphipathic side chains comprising a fivemethylene spacer and a terminal triethylene glycol segment. [28,[32][33][34] Following bromination, the reactive monomers were subject to Stille polycondensation with 2,5-bis(trimethylstannyl)thiophene to afford thiophene copolymers IG-T, AIG-T and TIG-T and to Suzuki polycondensation with 2,1,3-benzothiadiazole-4,7-bis(boronic acid pinacol ester) to afford 2,1,3benzothiadiazole copolymers IG-BT, AIG-BT and TIG-BT. The crude polymers were purified by Soxhlet extractions, after which the polymers were obtained with estimated weight average molecular weights of 35 kDa, 29 kDa and 26 kDa for IG-BT, AIG-T and AIG-BT, respectively, as determined by gel permeation chromatography and further detailed in the SI.…”
Section: Synthesis and Characterizationmentioning
confidence: 99%
“…The transistors based on the dicyanated isoindigo displayed unipolar charge transport by modifying the dielectric with self‐assembled monolayers (SAMs) of n ‐tetradecylphosphonic acid (TPA) whereas it was interestingly noted that the device showed good ambipolar performance under the adoption of 12,12,13,13,14,14,15,15,16,16,17,17,18,18,18‐pentadecylfluorooctadecylphosphonic acid (FOPA) SAMs onto the insulating layer probably due to polarization effect of the electronegative fluorine atoms . Different substituents and substitutional positions together with modified insulating layers via various SAMs provide more possibilities to realize better performance ambipolar transistors on the basis of isoindigo derivatives …”
Section: Ambipolar Organic Semiconducting Materialsmentioning
confidence: 99%