2022
DOI: 10.1002/adma.202107829
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From p‐ to n‐Type Mixed Conduction in Isoindigo‐Based Polymers through Molecular Design

Abstract: dominated by poly (3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) and closely related derivatives as the active material, [4][5][6][7] new semiconducting materials have started to enter the arena in recent years. [8][9][10][11][12] In particular, hole-transporting (p-type) mixed conductors have emerged with properties on par or even better than benchmark PEDOT:PSS formulations, [9,13,14] whereas electron-transporting (n-type) materials are still lacking considerably in terms of mixed conductio… Show more

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Cited by 49 publications
(58 citation statements)
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“…The OECT devices of both polymers showed clear n-type accumulation-mode characteristics with almost negligible hysteresis in their transfer and output curves regardless of device gate voltage scan rate (Figures 3a-d, Table 2; with literature-reported channel materials for n-type OECTs; [38][39][40][41][42][43][44][45][46][47][48][49][50][51][52] please note the representative high-performance materials based on various electrondeficient building blocks are shown in color with displayed legends while the rest are shown in black.…”
Section: Resultsmentioning
confidence: 85%
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“…The OECT devices of both polymers showed clear n-type accumulation-mode characteristics with almost negligible hysteresis in their transfer and output curves regardless of device gate voltage scan rate (Figures 3a-d, Table 2; with literature-reported channel materials for n-type OECTs; [38][39][40][41][42][43][44][45][46][47][48][49][50][51][52] please note the representative high-performance materials based on various electrondeficient building blocks are shown in color with displayed legends while the rest are shown in black.…”
Section: Resultsmentioning
confidence: 85%
“…Since the pioneering work of p(gNDI-gT2) in 2016, [38] there are only limited number of reports on n-type materials for OECTs (please see summary in Table S1, Supporting Information). They mainly include donor-acceptor (D-A) polymers such as naphthalene diimde (NDI)-based P90, [39,40] p(C6-gNDI-gT2), [41] P(NDIMTEG-T), [42] P(C6-T2), [43] bithiophene diimide-based f-BTI2TEG-FT, [44] isoindigo-based AIG-BT, [45] lactone-based p(C-T), [46] and diketopyrrolopyrrolebased P(gPzDPP-CT2), [47] all-acceptor (A-A) ladder-type polymers BBL [48,49] and PgNaN, [50] small molecule C60-TEG. [51] n-Type organic mixed ionic-electronic conductors (OMIECs) with high electron mobility are scarce and highly challenging to develop.…”
Section: Introductionmentioning
confidence: 99%
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“…Notably, different from the charge transport in OFETs, where closer π–π stacking facilities the electron charge transport, [ 29 ] while the charge conduction in OECTs is dominated by the bulk doping as well as ions transport. [ 39 ] We thus postulate that the coexist of face‐on and edge‐on orientation of gNR with its bimodal orientation packing enables effective 3D charge transport, [ 24,40,45,67,68 ] rendering the higher OECT channel mobility up to 10 −2 cm 2 V −1 s −1 than that of hgNR .…”
Section: Resultsmentioning
confidence: 99%
“…[31][32][33][34][35] Hence, developing high-performance and ambiently stable n-type OSCs for OFETs is highly desirable. 28,[36][37][38][39][40] In addition, aromatic frameworks with conjugated cores functionalized with electron-withdrawing substituents are suitable building blocks for electron transport. [41][42][43] Among different OSC structural variations, dicyanomethylene (DCN)-substituted quinoidal oligothiophenes are excellent n-type semiconductors because of their high electron affinity originating from the quinoidal structure terminated by two strongly electronwithdrawing groups, affording low-lying LUMO energy levels.…”
Section: Introductionmentioning
confidence: 99%