2022
DOI: 10.1002/adma.202201340
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Cyano‐Functionalized n‐Type Polymer with High Electron Mobility for High‐Performance Organic Electrochemical Transistors

Abstract: Scheme 1. Synthetic route to the fused bithiophene imide dimer-based n-type polymers f-BTI2g-TVT and f-BTI2g-TVTCN.

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Cited by 68 publications
(68 citation statements)
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References 78 publications
(166 reference statements)
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“…12f). 23 Compared to the noncyanated polymer P109, the cyanated polymer P110 showed the enhanced ion-uptake ability. Furthermore, more ordered film structures were performed (Fig.…”
Section: Conjugated Polymersmentioning
confidence: 97%
“…12f). 23 Compared to the noncyanated polymer P109, the cyanated polymer P110 showed the enhanced ion-uptake ability. Furthermore, more ordered film structures were performed (Fig.…”
Section: Conjugated Polymersmentioning
confidence: 97%
“…This “lowering LUMO” strategy effectively enhances electron mobility and has promoted the fast development of n-type OFETs 16 24 . Inspired by this strategy, in the last 3 years, several strong electron-deficient n-type building blocks have been designed and used for OECTs, including naphthalene diimide (NDI) 9 , 11 , 25 , benzodifurandione-based oligo( p -phenylene vinylene) (BDOPV) 26 , bithiophene imide (BTI) 27 , 28 , pyrazine-flanked diketopyrrolopyrrole (PzDPP) 11 , 7,7′-diazaisoindigo (AIG) 29 , and some ladder-type polymers 15 , 30 . The μC * of the n-type OECT materials have been greatly enhanced from less than 0.1 F cm −1 V −1 s −1 to over 10 F cm −1 V −1 s −1 9 , 28 .…”
Section: Introductionmentioning
confidence: 99%
“…Inspired by this strategy, in the last 3 years, several strong electron-deficient n-type building blocks have been designed and used for OECTs, including naphthalene diimide (NDI) 9 , 11 , 25 , benzodifurandione-based oligo( p -phenylene vinylene) (BDOPV) 26 , bithiophene imide (BTI) 27 , 28 , pyrazine-flanked diketopyrrolopyrrole (PzDPP) 11 , 7,7′-diazaisoindigo (AIG) 29 , and some ladder-type polymers 15 , 30 . The μC * of the n-type OECT materials have been greatly enhanced from less than 0.1 F cm −1 V −1 s −1 to over 10 F cm −1 V −1 s −1 9 , 28 . However, most of these works require the synthesis of complicated acceptor moieties with lengthy and expensive synthetic steps, which impedes the practical applications of n-type OECTs.…”
Section: Introductionmentioning
confidence: 99%
“…We are particularly interested in designing and synthesizing small molecular semiconductors for the channel layer in OECTs. , Very recently, our group reported a novel small-molecule semiconductor ( gNR ) that was comprised of a fused and rigid naphthalene bis-isatin and rhodanine skeleton with hydrophilic OEG side chains, which exhibited a maximum dimensionally normalized transconductance of 0.4 S cm –1 and a superb μ C * value of 2.6 F V –1 cm –1 s –1 . Nevertheless, the gNR film was spin-coated from CF and showed relatively poor operational stability; meanwhile, the device performance still lagged behind that of n-type polymeric analogues . Herein, we first proposed three FAs, including TFE, HFIP, and PFTB, with the number of fluorine atoms gradually increasing, as the processing solvents in OECTs for our newly emerging high mixed ionic–electronic conductor gNR without using any additives or posttreatments.…”
Section: Introductionmentioning
confidence: 99%
“…20 Nevertheless, the gNR film was spin-coated from CF and showed relatively poor operational stability; meanwhile, the device performance still lagged behind that of n-type polymeric analogues. 40 Herein, we first proposed three FAs, including TFE, HFIP, and PFTB, with the number of fluorine atoms gradually increasing, as the processing solvents in OECTs for our newly emerging high mixed ionic−electronic conductor gNR without using any additives or posttreatments. Moreover, the important morphology−performance relationships have been elaborately demonstrated.…”
Section: Introductionmentioning
confidence: 99%